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MS1051 PDF预览

MS1051

更新时间: 2024-11-29 03:48:23
品牌 Logo 应用领域
ADPOW 晶体射频双极晶体管微波放大器局域网
页数 文件大小 规格书
4页 92K
描述
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

MS1051 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, O-PRFM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.64Is Samacsys:N
其他特性:WITH EMITTER BALLASTING RESISTORS最大集电极电流 (IC):20 A
集电极-发射极最大电压:18 V配置:SINGLE
最高频带:HIGH FREQUENCY BANDJESD-30 代码:O-PRFM-F4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MS1051 数据手册

 浏览型号MS1051的Datasheet PDF文件第2页浏览型号MS1051的Datasheet PDF文件第3页浏览型号MS1051的Datasheet PDF文件第4页 
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
MS1051  
RF & MICROWAVE TRANSISTORS  
HF SSB APLICATIONS  
Features  
·
·
·
·
·
·
·
30 MHz  
12.5 VOLTS  
POUT = 100 WATTS  
GPE = 12.0 dB MINIMUM  
IMD = –30 dBc  
GOLD METALLIZATION  
COMMON EMITTER CONFIGURATION  
DESCRIPTION:  
The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar  
transistor designed primarily for HF communications. This  
device utilizes state-of-the-art diffused emitter ballasting to  
achieve extreme ruggedness under severe operating  
conditions.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCBO  
Parameter  
Value  
36  
Unit  
V
Collector-Base Voltage  
VCEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Device Current  
18  
V
VEBO  
IC  
4.0  
20  
V
A
PDISS  
TJ  
Power Dissipation  
290  
+200  
W
°C  
°C  
Junction Temperature  
Storage TEmperature  
TSTG  
-65 to +150  
THERMAL DATA  
RTH(J-C)  
Thermal Resistance Junction-case  
0.6  
°C/W  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  
Rev A 11/2005  

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