生命周期: | Active | 包装说明: | DISK BUTTON, O-CRDB-F4 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.2 A |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 10 | 最高频带: | L BAND |
JESD-30 代码: | O-CRDB-F4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 200 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 7 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | RADIAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MRF1001 | MICROSEMI |
获取价格 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
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MRF1001A | MICROSEMI |
获取价格 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
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MRF1001A | ASI |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
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MRF1002 | MOTOROLA |
获取价格 |
MICROWAVE POWER TRANSISTORS |
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MRF1002MA | MOTOROLA |
获取价格 |
MICROWAVE POWER TRANSISTORS |
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MRF1002MB | MOTOROLA |
获取价格 |
MICROWAVE POWER TRANSISTORS |
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MRF1002MB | ASI |
获取价格 |
NPN SILICON RF POWER TRANSISTOR |
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MRF10031 | MOTOROLA |
获取价格 |
MICROWAVE POWER TRANSISTOR |
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MRF10031 | TE |
获取价格 |
MICROWAVE POWER TRANSISTOR NPN SILICON |
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MRF10031 | NJSEMI |
获取价格 |
Trans GP BJT NPN 55V 3A 3-Pin Case 376B-02 |
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