Datasheet > MRAL1720-9_07

MRAL1720-9_07

更新时间： 2025-08-19 10:47:51

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	34K
描述
NPN SILICON RF POWER TRANSISTOR

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MRAL1720-9_07 数据手册

MRAL1720-9

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE 250 2L FLG

The ASI MRAL1720-9 is Designed

for Class C, Common Base Wideband

Large Signal Amplifier Applications up

to 2.0 GHz.

FEATURES:

• Diffused Ballast Resistors.

• Internal Matching Network

• Omnigold™ Metalization System

MAXIMUM RATINGS

4.0 A ^(CONT)

42 V

I_C

V_CES

V_EBO

T_J

3.5 V

-65 °C to +200 °C

-65 °C to +150 °C

4.5 °C/W

T_STG

θ_JC

NONE

MINIMUM TYPICAL MAXIMUM UNITS

CHARACTERISTICS T_C= 25 °C

SYMBOL

BV_CES

TEST CONDITIONS

I_C= 80 mA

I_E= 1.0 mA

3.5

BV_EBO

I_CBO

_CB= 22 V

_CE= 5.0 V

2.0

---

I_C= 400 mA

P_out= 9.0 W

100

h_FE

V_CB= 28 V

f = 1.0 MHz

f = 1.7 GHz & 2.0 GHz

C_ob

6.5

G_PB

V_CE= 22 V

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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