Datasheet > MR4A16B

MR4A16B

更新时间： 2024-02-02 09:16:21

品牌	Logo	应用领域
EVERSPIN		/
页数	文件大小	规格书
16页	909K
描述
1M x 16 MRAM

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中文翻译

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数据手册

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MR4A16B 数据手册

Electrical Speciﬁcations

MR4A16B

Table 2.3 DC Characteristics

Symbol

Parameter

Conditions

Min

Max

Unit

I_lkg(I)

Input leakage current

All

μA

I_lkg(O)

Output leakage current

All

μA

I_OL= +4 mA

0.4

V_OL

Output low voltage

I_OL= +100 μA

V_SS+ 0.2

I_OH= -4 mA

2.4

V_OH

Output high voltage

I_OH= -100 μA

V_DD- 0.2

Table 2.4 Power Supply Characteristics

Symbol Parameter

Typical

Max

Unit

AC active supply current - read modes¹

(I_OUT= 0 mA, V_DD= max)

I_DDR

AC active supply current - write modes¹

(V_DD= max)

I_DDW

152

180

AC standby current

I_SB1

(V_DD= max, E = V_IH)

no other restrictions on other inputs

CMOS standby current

I_SB2

(E ≥ V_DD- 0.2 V and V_In≤V_SS+ 0.2 V or ≥ V_DD- 0.2 V)

(V_DD= max, f = 0 MHz)

All active current measurements are measured with one address transition per cycle and at minimum cycle time.

MR4A16B Rev. 11.7 3/2018

1...3 4 567 8 9...16

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