Datasheet > MR4S08AVTS35C

MR4S08AVTS35C

更新时间： 2024-02-24 06:25:32

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
22页	227K
描述
256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

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MR4S08AVTS35C 数据手册

Document Number: MR2A16A

Rev. 4, 6/2007

Freescale Semiconductor

Data Sheet

256K x 16-Bit 3.3-V

Asynchronous

Magnetoresistive RAM

MR2A16A

44-TSOP

Case 924A-02

Introduction

Features

•

Single 3.3-V power supply

The MR2A16A is a 4,194,304-bit magnetoresistive

random access memory (MRAM) device

Commercial temperature range (0˚C to

70˚C), Industrial temperature range (-40˚C

to 85˚C) and Extended temperature range

(-40˚C to 105˚C)

organized as 262,144 words of 16 bits. The

MR2A16A is equipped with chip enable (E), write

enable (W), and output enable (G) pins, allowing

for significant system design flexibility without bus

contention. Because the MR2A16A has separate

byte-enable controls (LB and UB), individual bytes

can be written and read.

•

Symmetrical high-speed read and write with

fast access time (35 ns)

Flexible data bus control — 8 bit or 16 bit

access

MRAM is a nonvolatile memory technology that

protects data in the event of power loss and does

not require periodic refreshing. The MR2A16A is

the ideal memory solution for applications that

must permanently store and retrieve critical data

quickly.

Equal address and chip-enable access

times

Automatic data protection with low-voltage

inhibit circuitry to prevent writes on power

loss

•

All inputs and outputs are

The MR2A16A is available in a 400-mil, 44-lead

plastic small-outline TSOP type-II package with an

industry-standard center power and ground SRAM

pinout.

transistor-transistor logic (TTL) compatible

•

Fully static operation

Full nonvolatile operation with 20 years

minimum data retention

The MR2A16A is available in Commercial (0˚C to

70˚C), Industrial (-40˚C to 85˚C) and Extended

(-40˚C to 105˚C) ambient temperature ranges.

12 3 4 5 6 7...22

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