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MR25H40CDFR PDF预览

MR25H40CDFR

更新时间： 2024-02-07 07:29:38
品牌 Logo 应用领域
EVERSPIN 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
30页 1649K
描述
50MHz/20ns tSCK 4Mb SPI Interface MRAM / 40MHz/25ns tSCK 4Mb SPI Interface MRAM

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中文翻译

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MR25H40CDFR 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：SON包装说明：DFN-8
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.71
风险等级：5.61JESD-30 代码：R-PDSO-N8
长度：6 mm内存密度：4194304 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：8
混合内存类型：N/A湿度敏感等级：3
功能数量：1端子数量：8
字数：524288 words字数代码：512000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：512KX8
封装主体材料：PLASTIC/EPOXY封装代码：HVSON
封装等效代码：SOLCC8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度（摄氏度）：260
电源：3.3 V认证状态：Not Qualified
座面最大高度：0.9 mm最大待机电流：0.0004 A
子类别：SRAMs最大压摆率：0.042 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：NO LEAD端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
宽度：5 mmBase Number Matches：1

MR25H40CDFR 数据手册

 浏览型号MR25H40CDFR的Datasheet PDF文件第2页浏览型号MR25H40CDFR的Datasheet PDF文件第3页浏览型号MR25H40CDFR的Datasheet PDF文件第4页浏览型号MR25H40CDFR的Datasheet PDF文件第5页浏览型号MR25H40CDFR的Datasheet PDF文件第6页浏览型号MR25H40CDFR的Datasheet PDF文件第7页 
MR20H40 / MR25H40  
t
MR20H40 - 50MHz/20ns SCK 4Mb SPI Interface MRAM  
t
MR25H40 - 40MHz/25ns SCK 4Mb SPI Interface MRAM  
For more information on product options, see “Table 16 – Ordering Part Numbers” on page 25.  
FEATURES  
•
•
•
•
•
•
•
•
No write delays  
Unlimited write endurance  
Data retention greater than 20 years  
Automatic data protection on power loss  
Fast, simple SPI interface, up to 50 MHz clock rate with MR20H40.  
3.0 to 3.6 Volt power supply range  
Low-current sleep mode  
8-DFN  
Commercial (0 to 70°C), Industrial (-40 to 85°C), Extended (-40 to 105°C), and  
AEC-Q100 Grade 1 (-40 to 125°C) temperature range options.  
8-DFN Small Flag  
•
•
•
Available in 8-pin DFN or 8-pin DFN Small Flag, RoHS-compliant packages.  
Direct replacement for serial EEPROM, Flash, and FeRAM  
MSL Level 3  
RoHS  
DESCRIPTION  
MR2xH40 is a family of 4,194,304-bit magnetoresistive random access memory (MRAM) devices  
organized as 524,288 words of 8 bits. They are the ideal memory solution for applications that must  
store and retrieve data and programs quickly using a small number of I/O pins. They have serial EE-  
PROM and serial Flash compatible read/write timing with no write delays and unlimited read/write  
endurance. Unlike other serial memories, with the MR2xH40 family both reads and writes can occur  
randomly in memory with no delay between writes.  
The MR2xH40 family provides highly reliable data storage over a wide range of temperatures. The  
MR20H40 (50MHz) is offered with Industrial (-40° to 85 °C) range. The MR25H40 (40MHz) is offered  
with Commercial (0 to 70°C), Industrial (-40° to 85 °C), Extended (-40 to 105°C), and AEC-Q100 Grade  
1 (-40°C to 125 °C) operating temperature range options.  
Both are available in a 5 x 6mm, 8-pin DFN package. The pinout is compatible with serial SRAM,  
EEPROM, Flash, and FeRAM products.  
1
Copyright © Everspin Technologies 2020  
MR20H40 / MR25H40 Revision 12.6, 8/2020  
1234567...30

中文翻译

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与MR25H40CDFR相关器件

型号 品牌 获取价格 描述 数据表
MR25H40DF EVERSPIN

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 		50MHz/20ns tSCK 4Mb SPI Interface MRAM / 40MHz/25ns tSCK 4Mb SPI Interface MRAM
MR25H40DFR EVERSPIN

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 		50MHz/20ns tSCK 4Mb SPI Interface MRAM / 40MHz/25ns tSCK 4Mb SPI Interface MRAM
MR25H40MDF EVERSPIN

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 		50MHz/20ns tSCK 4Mb SPI Interface MRAM / 40MHz/25ns tSCK 4Mb SPI Interface MRAM
MR25H40MDFR EVERSPIN

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 		50MHz/20ns tSCK 4Mb SPI Interface MRAM / 40MHz/25ns tSCK 4Mb SPI Interface MRAM
MR25H40VDF EVERSPIN

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 		50MHz/20ns tSCK 4Mb SPI Interface MRAM / 40MHz/25ns tSCK 4Mb SPI Interface MRAM
MR25H40VDFR EVERSPIN

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 		50MHz/20ns tSCK 4Mb SPI Interface MRAM / 40MHz/25ns tSCK 4Mb SPI Interface MRAM
MR25M RFE

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 		Fixed Resistor, Metal Film, 200V, Through Hole Mount, AXIAL LEADED, ROHS COMPLIANT
MR25MAV3-10K-F RFE

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 		PACKAGING SPECIFICATIONS Avisert (AV3) & Panasert (PA) Specifications
MR25MPA-10K-F RFE

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 		PACKAGING SPECIFICATIONS Avisert (AV3) & Panasert (PA) Specifications
MR25MR-11K5-F50-T52 RFE

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 		RESISTOR, METAL FILM, 0.25W, 1%, 50ppm, 11500ohm, THROUGH HOLE MOUNT, AXIAL LEADED, ROHS C

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