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MR256D08BMA45R PDF预览

MR256D08BMA45R

更新时间: 2024-01-02 15:13:46
品牌 Logo 应用领域
EVERSPIN 内存集成电路
页数 文件大小 规格书
16页 764K
描述
Dual Supply 32K x 8 MRAM

MR256D08BMA45R 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:BGA包装说明:LFBGA, BGA48,6X8,30
针数:48Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.16最长访问时间:45 ns
JESD-30 代码:S-PBGA-B48长度:8 mm
内存密度:262144 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:8功能数量:1
端子数量:48字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:LFBGA封装等效代码:BGA48,6X8,30
封装形状:SQUARE封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度(摄氏度):260电源:3.3 V
认证状态:Not Qualified座面最大高度:1.35 mm
最大待机电流:0.008 A子类别:Other Memory ICs
最大压摆率:0.065 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:40宽度:8 mm
Base Number Matches:1

MR256D08BMA45R 数据手册

 浏览型号MR256D08BMA45R的Datasheet PDF文件第2页浏览型号MR256D08BMA45R的Datasheet PDF文件第3页浏览型号MR256D08BMA45R的Datasheet PDF文件第4页浏览型号MR256D08BMA45R的Datasheet PDF文件第5页浏览型号MR256D08BMA45R的Datasheet PDF文件第6页浏览型号MR256D08BMA45R的Datasheet PDF文件第7页 
MR256D08B  
Dual Supply 32K x 8 MRAM  
FEATURES  
• +3.3 Volt power supply  
• I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces  
• Fast 45 ns read/write cycle  
• SRAM compatible timing  
• Unlimited read & write endurance  
• Data always non-volatile for >20-years at temperature  
• RoHS-compliant small footprint BGA package  
BENEFITS  
• One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems  
for simpler, more efficient designs  
RoHS  
• Improves reliability by replacing battery-backed SRAM  
INTRODUCTION  
The MR256D08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as  
32,768 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR256D08B offers SRAM  
compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than  
20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes  
with voltage out of specification. The MR256D08B is the ideal memory solution for applications that must  
permanently store and retrieve critical data and programs quickly.  
The MR256D08B is available in small footprint 8 mm x 8 mm, 48-pin ball grid array (BGA) package with  
0.75 mm ball centers.  
The MR256D08B provides highly reliable data storage over a wide range of temperatures. The product is  
offered with commercial temperature (0 to +70 °C).  
CONTENTS  
1. DEVICE PIN ASSIGNMENT......................................................................... 2  
2. ELECTRICAL SPECIFICATIONS................................................................. 4  
3. TIMING SPECIFICATIONS.......................................................................... 8  
4. ORDERING INFORMATION....................................................................... 13  
5. MECHANICAL DRAWING.......................................................................... 14  
6. REVISION HISTORY...................................................................................... 15  
How to Reach Us.......................................................................................... 15  
Copyright © 2018 Everspin Technologies, Inc.  
1
MR256D08B Rev. 3.3 3/2018  

MR256D08BMA45R 替代型号

型号 品牌 替代类型 描述 数据表
MR256D08BMA45 EVERSPIN

完全替代

Dual Supply 32K x 8 MRAM

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