Datasheet > MR0DL08BMA45

MR0DL08BMA45

更新时间： 2024-02-28 15:23:03

品牌	Logo	应用领域
EVERSPIN		/
页数	文件大小	规格书
16页	786K
描述
Dual Supply 128K x 8 MRAM

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数据手册

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MR0DL08BMA45 数据手册

MR0DL08B

Dual Supply 128K x 8 MRAM

FEATURES

• 3.3 Volt V_DDpower supply with a range of 2.7V to 3.6V

• I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces

• Fast 45 ns read/write cycle

• SRAM compatible timing

• Unlimited read & write endurance

• Data always non-volatile for >20-years at temperature

• All products meet MSL-3 moisture sensitivity level

• RoHS-compliant small footprint BGA package

BENEFITS

• One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems

for simpler, more eﬃcient designs

RoHS

• Improves reliability by replacing battery-backed SRAM

INTRODUCTION

The MR0DL08B is a dual power supply 1,048,576-bit magnetoresistive random access memory (MRAM)

device organized as 131,072 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The

MR0DL08B oﬀers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always

non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit

circuitry to prevent writes with voltage out of speciﬁcation. The MR0DL08B is the ideal memory solution

for applications that must permanently store and retrieve critical data and programs quickly.

The MR0DL08B is available in small footprint 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75

mm ball centers.

The MR0DL08B provides highly reliable data storage over a wide range of temperatures. The product is

oﬀered with commercial temperature (0 to +70 °C).

CONTENTS

1. DEVICE PIN ASSIGNMENT......................................................................... 2

2. ELECTRICAL SPECIFICATIONS................................................................. 4

3. TIMING SPECIFICATIONS.......................................................................... 8

4. ORDERING INFORMATION....................................................................... 13

5. MECHANICAL DRAWING.......................................................................... 14

6. REVISION HISTORY...................................................................................... 15

How to Reach Us.......................................................................................... 15

MR0DL08B Rev. 1.3, 3/2018

12 3 4 5 6 7...16

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与MR0DL08BMA45相关器件

型号	品牌	获取价格	描述	数据表
MR0DL08BMA45R	EVERSPIN	获取价格	Dual Supply 128K x 8 MRAM
MR0S08ACTS35C	FREESCALE	获取价格	256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR0S08ACYS35	FREESCALE	获取价格	64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR0S08ACYS35	NXP	获取价格	SPECIALTY MEMORY CIRCUIT, PDSO44, 0.400 MM, ROHS COMPLIANT, PLASTIC, TSOP2-44
MR0S08ATS35C	NXP	获取价格	SPECIALTY MEMORY CIRCUIT, PDSO44, 0.400 MM, ROHS COMPLIANT, PLASTIC, TSOP2-44
MR0S08AVTS35C	FREESCALE	获取价格	256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR0S08AVYS35	NXP	获取价格	SPECIALTY MEMORY CIRCUIT, PDSO44, 0.400 MM, ROHS COMPLIANT, PLASTIC, TSOP2-44
MR0S08AVYS35	FREESCALE	获取价格	64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR0S08AYS35	FREESCALE	获取价格	64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR0S08AYS35	NXP	获取价格	SPECIALTY MEMORY CIRCUIT, PDSO44, 0.400 MM, ROHS COMPLIANT, PLASTIC, TSOP2-44

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