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MQSMCJ5653AE3 PDF预览

MQSMCJ5653AE3

更新时间： 2024-11-23 19:29:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
3页 426K
描述
Trans Voltage Suppressor Diode, 1500W, 58.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, PLASTIC PACKAGE-2

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MQSMCJ5653AE3 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DO-214AB包装说明：R-PDSO-C2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.78其他特性：HIGH RELIABILITY
最大击穿电压：71.4 V最小击穿电压：64.6 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AB
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：5 W认证状态：Not Qualified
最大重复峰值反向电压：58.1 V表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MQSMCJ5653AE3 数据手册

 浏览型号MQSMCJ5653AE3的Datasheet PDF文件第2页浏览型号MQSMCJ5653AE3的Datasheet PDF文件第3页 
SMCG5629 thru SMCG5665A  
and SMCJ5629 thru SMCJ5665A  
Transient Voltage Suppressors  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These surface mount Transient Voltage Suppressors (TVSs) are used for protecting  
sensitive components requiring low clamping voltage levels. They are rated at high  
current impulses typically generated by inductive switching transients. Other  
benefits are achieved with low-profile surface mount J-bend or Gull-wing terminals  
for stress-relief and lower weight. Its low-flat profile provides easier insertion or  
automatic handling benefits compared to other MELF style packages. Options for  
screening similar to JAN, JANTX, JANTXV, and JANS also exist by using MQ, MX,  
MV or MSP respectively for part number prefixes and high reliability screening in  
accordance with MIL-PRF-19500/507.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
Working Standoff Voltages: 5.5 volts to 171 volts  
Metallurgically bonded  
Reliability data per JESD22-A108, JESD22-A104,  
JESD22-A113-B, JESD22-A101-B, and JESD22-A102  
Thermally efficient surface mount with J-bends or  
Gull wings termination for stress relief (flat handling  
surface and easier placement)  
•
•
For high reliability transient voltage suppression in  
low profile surface mount locations requiring easy  
placement and strain relief  
Light weight for airborne or satellite applications  
•
• Superior surge quality to protect from ESD and EFT  
transients per IEC61000-4-2 and -4-4  
•
Lightning surge protection per IEC61000-4-5 for  
Class 1 and 2 with source impedance of 42 Ohms as  
well as Class 3 and 4 selectively at lower voltages  
(VWM) and higher surge current (IPP) ratings herein  
•
Options for screening in accordance with MIL-PRF-  
19500/500 for JAN, JANTX, JANTXV, and JANS are  
available by adding MQ, MX, MV, or MSP prefixes  
respectively to part numbers. For example,  
•
Protects sensitive components such as ICs, CMOS,  
designate a MXSMCJ5629A for a JANTX screen.  
Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
Operating temperature: -55°C to +150°C  
• Molded epoxy package meets UL94V-0  
• Terminals: Solderable per MIL-STD-750  
Method 2026. (max 260 °C for 10 sec.)  
• Body marked with P/N without SMCJ or SMCG letters  
(ie. 5629A, 5640, 5655A, 5662, 5665A, etc.)  
• Cathode indicated by band  
• Weight: 0.25 grams (approximate)  
• Tape & Reel packaging per EIA-481  
(2500 units/reel)  
Storage temperature: -55°C to +150°C  
1500 Watts of Peak Pulse Power at 10/1000 µs as  
shown in Figure 3 (see Figure 1 for other tP values)  
Thermal resistance, RθJL = 20°C/W  
•
•
•
•
Impulse repetition rate (duty factor): 0.01%  
5.0 Watt steady-state maximum power at TL =25°C  
t
clamping (0V to V(BR) min): 50 picoseconds max  
(theoretical)  
•
Forward voltage VF @ 100 Amps 8.3 ms: 3.5 V max.  
ELECTRICAL CHARACTERISTICS @ 25oC (Test Both Polarities)  
MICROSEMI  
Part Number  
MICROSEMI  
Part Number  
Breakdown  
Rated  
Standoff  
Voltage  
Maximum  
Standby  
Current  
Voltage*  
Test  
Maximum Peak  
Reverse Voltage  
Maximum Peak  
Pulse Current  
(VBR  
)
Current  
Modified  
“G”  
Modified  
“J”  
MIN. MAX.  
(I(BR)  
)
(VWM  
)
(ID at VWM  
)
(VC max. at IPP  
)
(IPP  
)
Vdc  
Vdc  
7.48  
7.14  
8.25  
7.88  
9.02  
8.61  
10.0  
9.55  
11.0  
10.5  
12.1  
11.6  
mAdc  
V
µAdc  
1000  
1000  
500  
500  
200  
200  
50  
V
A
Bend Lead  
SMCG5629  
SMCG5629A  
SMCG5630  
SMCG5630A  
SMCG5631  
SMCG5631A  
SMCG5632  
SMCG5632A  
SMCG5633  
SMCG5633A  
SMCG5634  
SMCG5634A  
Bend Lead  
SMCJ5629  
SMCJ5629A  
SMCJ5630  
SMCJ5630A  
SMCJ5631  
SMCJ5631A  
SMCJ5632  
SMCJ5632A  
SMCJ5633  
SMCJ5633A  
SMCJ5634  
SMCJ5634A  
6.12  
6.45  
6.75  
7.13  
7.38  
7.79  
8.19  
8.65  
9.00  
9.5  
10  
5.50  
5.80  
6.05  
6.40  
6.63  
7.02  
7.37  
7.78  
8.10  
8.55  
8.92  
9.40  
10.8  
10.5  
11.7  
11.3  
12.5  
12.1  
13.8  
13.4  
15.0  
14.5  
16.2  
15.6  
139  
143  
128  
132  
120  
124  
109  
112  
100  
103  
93  
10  
10  
10  
10  
10  
1
1
50  
1
10  
1
10  
9.9  
1
5
10.5  
1
5
96  
Copyright 2003  
Microsemi  
Page 1  
01-24-2003 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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与MQSMCJ5653AE3相关器件

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MQSMCJ5653E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 55.1V V(RWM), Unidirectional, 1 Element, Silicon, D
MQSMCJ5654 MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 60.7V V(RWM), Unidirectional, 1 Element, Silicon, D
MQSMCJ5654A MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 64.1V V(RWM), Unidirectional, 1 Element, Silicon, D
MQSMCJ5654AE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 64.1V V(RWM), Unidirectional, 1 Element, Silicon, D
MQSMCJ5654E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 60.7V V(RWM), Unidirectional, 1 Element, Silicon, D
MQSMCJ5655 MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 66.4V V(RWM), Unidirectional, 1 Element, Silicon, D
MQSMCJ5655A MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, D
MQSMCJ5655AE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, D
MQSMCJ5655E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 66.4V V(RWM), Unidirectional, 1 Element, Silicon, D
MQSMCJ5656 MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 73.7V V(RWM), Unidirectional, 1 Element, Silicon, D

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