5秒后页面跳转
捷配首页

Datasheet > MQSMAJ43CAE3
MQSMAJ43CAE3 PDF预览

MQSMAJ43CAE3

更新时间： 2024-11-21 13:32:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
5页 218K
描述
Trans Voltage Suppressor Diode, 500W, 43V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMAJ, 2 PIN

阅读下载

中文翻译

获取价格

MQSMAJ43CAE3 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：DO-214AC包装说明：ROHS COMPLIANT, PLASTIC, SMAJ, 2 PIN
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.59Is Samacsys：N
最小击穿电压：47.8 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214ACJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：500 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大功率耗散：1.56 W认证状态：Not Qualified
最大重复峰值反向电压：43 V表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MQSMAJ43CAE3 数据手册

 浏览型号MQSMAJ43CAE3的Datasheet PDF文件第2页浏览型号MQSMAJ43CAE3的Datasheet PDF文件第3页浏览型号MQSMAJ43CAE3的Datasheet PDF文件第4页浏览型号MQSMAJ43CAE3的Datasheet PDF文件第5页 
SMAJ5.0 thru SMAJ170CA, e3  
SURFACE MOUNT 500 Watt  
Transient Voltage Suppressor  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
PACKAGE  
This SMAJ5.0-170A series of surface mount 500 W Transient Voltage  
Suppressors (TVSs) protects a variety of voltage-sensitive components from  
destruction or degradation. The package outline is similar to the DO-214AC or  
DO-214BA. It is also available in a unidirectional configuration or as bidirectional  
with a C or CA suffix part number as well as RoHS Compliant with an “e3”suffix.  
Their response time is virtually instantaneous. As a result, they can be used for  
protection from ESD or EFT per IEC61000-4-2 and IEC61000-4-4, or for  
inductive switching environments and induced RF protection. They can also  
protect from secondary lightning effects per IEC61000-4-5 and class levels  
defined herein. Microsemi also offers numerous other TVS products to meet  
DO-214AC or BA  
(SMAJ)  
higher and lower power demands and special applications.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Selections for 5.0 to 170 volts standoff voltages (VWM  
)
•
•
Economical surface mount  
Suppresses transients up to 500 watts @ 10/1000 µs (see  
Figure 1) with fast response  
Available in Unidirectional or as Bidirectional  
construction with a C or CA suffix  
•
Optional 100% screening for avionics grade is available  
by adding MA prefix to part number for added 100%  
temperature cycle -55oC to +125oC (10X) as well as surge  
(3X) and 24 hours HTRB with post test VZ & IR (in the  
operating direction for unidirectional or both directions for  
bidirectional)  
•
Protects sensitive components such as IC’s,  
CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
•
•
Protection from switching transients & induced RF  
Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively  
•
•
Secondary lightning protection per IEC61000-4-5  
with 42 Ohms source impedance:  
•
•
Options for screening in accordance with MIL-PRF-19500  
for JAN, JANTX, and JANTXV are available by adding  
MQ, MX, or MV prefixes respectively to part numbers.  
Class 1: SMAJ5.0 to SMAJ100A or CA  
Class 2: SMAJ5.0 to SMAJ51A or CA  
Class 3: SMAJ5.0 to SMAJ24A or CA  
Class 4: SMAJ5.0 to SMAJ12A or CA  
Axial-lead equivalent packages for thru-hole mounting  
available as P5KE6.8 to P5KE170CA (consult factory for  
other surface mount options)  
•
•
Moisture classification is Level 1 with no dry pack required  
per IPC/JEDEC J-STD-020B  
Secondary lightning protection per IEC61000-4-5  
with 12 Ohms source impedance:  
RoHS Compliant devices available by adding an “e3” suffix  
Class 1: SMAJ5.0 to SMAJ30A or CA  
Class 2: SMAJ5.0 to SMAJ16A or CA  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
Peak Pulse Power dissipation at 25ºC: 500 watts at  
•
CASE: Void-free transfer molded thermosetting  
epoxy body meeting UL94V-0  
10/1000 μs (also see Fig 1,2, and 3)  
•
•
Impulse repetition rate (duty factor): 0.01%  
•
TERMINALS: C-bend (modified J-bend) leads Tin-  
Lead or RoHS compliant annealed matte-Tin plating  
solderable per MIL-STD-750, method 2026  
tclamping (0 volts to V(BR) min.): < 100 ps theoretical for  
unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65ºC to +150ºC  
Thermal resistance: 15 ºC/W junction to lead or 80ºC/W  
junction to ambient when mounted on FR4 PC board (1oz  
Cu) with recommended footprint (see last page)  
Steady-State Power dissipation: 5 watts at TL = 75oC, or  
1.56 watts at TA = 25ºC when mounted on FR4 PC board  
with recommended footprint  
•
•
•
POLARITY: Cathode indicated by band. No  
marking on bi-directional devices  
•
•
MARKING: Part number without SMA prefix (e.g.  
5.0, 5.0A, 5.0Ae3, 5.0CA, 36A, 36CA, 36CAe3, etc.)  
TAPE & REEL option: Standard per EIA-481-1-A  
with 12 mm tape, 750 per 7 inch reel or 2500 per 13  
inch reel (add “TR” suffix to part number)  
•
•
•
•
•
WEIGHT: 0.064 grams  
Forward Surge Current at 25ºC: 40 amps peak, 8.3 ms  
half-sine wave. Maximum voltage of 3.50 V  
(unidirectional only)  
Solder temperatures: 260 ºC for 10 s (maximum)  
See package dimension on last page  
Copyright © 2009  
4-14-2009 REV K  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12345

中文翻译

下载PDF

与MQSMAJ43CAE3相关器件

型号 品牌 获取价格 描述 数据表
MQSMAJ43CAE3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 43V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMAJ43CATR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 43V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMAJ43CE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 43V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMAJ43CE3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 43V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMAJ43CTR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 43V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMAJ43E3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 43V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MQSMAJ43E3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 43V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MQSMAJ43TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 43V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MQSMAJ4460 MICROSEMI

获取价格

 		Zener Diode, 6.2V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-214BA, PLASTIC, SMAJ, 2 PIN
MQSMAJ4460C MICROSEMI

获取价格

 		Zener Diode, 6.2V V(Z), 2%, 1.5W, Silicon, Unidirectional, DO-214BA, PLASTIC, SMAJ, 2 PIN

与MQSMAJ43CAE3相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证