Datasheet > MQSAC26E3

MQSAC26E3

更新时间： 2024-01-11 19:11:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	211K
描述
Trans Voltage Suppressor Diode, 500W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

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MQSAC26E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DO-41	包装说明：	O-PALF-W2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.71	最小击穿电压：	28.9 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-41	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e3	最大非重复峰值反向功率耗散：	500 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	2.5 W
认证状态：	Not Qualified	最大重复峰值反向电压：	26 V
表面贴装：	NO	技术：	AVALANCHE
端子面层：	MATTE TIN	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MQSAC26E3 数据手册

SAC5.0 thru SAC50, e3

500 WATT LOW CAPACITANCE

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This SAC5.0 thru SAC50 transient voltage suppressor (TVS) series rated at

500 watts provides an added rectifier element as shown in Figure 4 to

achieve low capacitance in applications for higher speed data or signal

lines. The low capacitance rating of 30 pF may be used for protecting

higher frequency applications in inductive switching environments or

electrical systems involving secondary lightning effects per IEC61000-4-5

DO-41

as well as RTCA/DO-160D or ARINC 429 for airborne avionics.

bidirectional protection is needed, two SAC devices in anti-parallel

configuration are required as shown in Figure 6. With their very fast

response time, they also provide ESD and EFT protection per IEC61000-4-

2 and IEC61000-4-4 respectively.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Unidirectional low-capacitance TVS series for

flexible thru-hole mounting (for bidirectional see

Figure 6)

•

Suppresses transient up to 500 Watts Peak Pulse

Power @ 10/1000 µs

•

Low Capacitance for data-line protection to 10 MHz

•

Improved performance in low capacitance of 30 pF

Protection for aircraft fast data rate lines up to Level 3

Waveform 4 and Level 1 Waveform 5A in RTCA/DO-

160D (also see MicroNote 130) & ARINC 429 with bit

rates of 100 kb/s (per ARINC 429, Part 1, par 2.4.1.1)

Economical plastic series in flexible axial-leaded

DO-41 package

•

Optional 100% screening for avionics grade is

available by adding MA prefix to part number for

added 100% temperature cycle -55^oC to +125^oC

(10X) as well as surge (3X) and 24 hours HTRB

with post test V_Z& I_R

•

ESD and EFT protection per IEC61000-4-2 and

IEC61000-4-4 respectively

Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

Class 1: SAC5.0 to SAC50

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, and JANTXV are also

available by adding MQ, MX, or MV prefixes

respectively to part number, e.g. MXSAC5.0,

MVSAC18, etc.

Class 2: SAC5.0 to SAC45

Class 3: SAC5.0 to SAC22

Class 4: SAC5.0 to SAC10

•

Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance

Class 1: SAC5.0 to SAC26

•

Also available in surface mount with HSMBJ prefix

for part numbers (ex. HSMBJSAC5.0)

RoHS Compliant devices available by adding “e3”

suffix

Class 2: SAC5.0 to SAC15

Class 3: SAC5.0 to SAC7.0

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

CASE: Void Free Transfer Molded Thermosetting Plastic

epoxy meeting UL94V-0

•

Peak Pulse Power Dissipation at 25^oC: 500 Watts @

•

10/1000 μs with repetition rate of 0.01% or less*

Steady State Power Dissipation* at T_L= +75^oC: 2.5 Watts

(Lead Length = 3/8”).

TERMINATIONS: Tin-lead or RoHS Compliant annealed

matte-Tin plating readily solderable per MIL-STD-750

method 2026

Clamping Speed (0 volts to V_(BR)Min.) less than 5

nanoseconds.

Operating and Storage Temperature: -65^oC to +150^oC.

•

POLARITY: Cathode indicated by band

MARKING: Part number and cathode band

WEIGHT: 0.7 Grams (Approx.)

See package dimensions on last page

* TVS devices are not typically used for dc power dissipation and are instead operated < V_WM(rated standoff voltage) except for transients that briefly

drive the device into avalanche breakdown (V_BRto V_Cregion) of the TVS element. Also see Figures 5 and 6 for further protection details in rated peak

pulse power for unidirectional and bidirectional configurations respectively.

Microsemi

Page 1

6-20-2007 REV E

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

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与MQSAC26E3相关器件

型号	品牌	获取价格	描述	数据表
MQSAC36	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-4
MQSAC36E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-4
MQSAC45	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 45V V(RWM), Unidirectional, 1 Element, Silicon, DO-4
MQSAC45E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 45V V(RWM), Unidirectional, 1 Element, Silicon, DO-4
MQSAC5.0	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-41
MQSAC5.0E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-41
MQSAC50	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 50V V(RWM), Unidirectional, 1 Element, Silicon, DO-4
MQSAC50E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 50V V(RWM), Unidirectional, 1 Element, Silicon, DO-4
MQSAC6.0	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-41
MQSAC6.0E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-41

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