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MQLC9.0E3 PDF预览

MQLC9.0E3

更新时间： 2024-11-16 18:10:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 189K
描述
Trans Voltage Suppressor Diode, 1500W, 9V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN

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MQLC9.0E3 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：DO-13包装说明：O-MALF-W2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.71最大击穿电压：12.2 V
最小击穿电压：10 V外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-202AA
JESD-30 代码：O-MALF-W2最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
封装主体材料：METAL封装形状：ROUND
封装形式：LONG FORM极性：UNIDIRECTIONAL
最大功率耗散：1 W参考标准：MIL-19500
最大重复峰值反向电压：9 V表面贴装：NO
技术：AVALANCHE端子形式：WIRE
端子位置：AXIALBase Number Matches：1

MQLC9.0E3 数据手册

 浏览型号MQLC9.0E3的Datasheet PDF文件第2页浏览型号MQLC9.0E3的Datasheet PDF文件第3页浏览型号MQLC9.0E3的Datasheet PDF文件第4页 
LC6.5 thru LC170A, e3  
1500 WATT LOW CAPACITANCE  
TRANSIENT VOLTAGE SUPPRESSOR  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This hermetically sealed Transient Voltage Suppressor (TVS) product family  
includes a rectifier diode element in series and opposite direction to achieve low  
capacitance performance below 100 pF (see Figure 2). The low level of TVS  
capacitance may be used for protecting higher frequency applications in inductive  
switching environments or electrical systems involving secondary lightning effects  
per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne  
avionics. With virtually instantaneous response, they also protect from ESD and  
EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar transient capability is  
required, two of these low capacitance TVS devices may be used in parallel in  
DO-13  
(DO-202AA)  
opposite directions (anti-parallel) for complete ac protection as shown in Figure 4.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Unidirectional low-capacitance TVS series for flexible  
thru-hole mounting (for bidirectional see Figure 4)  
•
•
•
Protection from switching transients and induced RF  
Low capacitance for data line protection up to 1 MHz  
Suppresses transients up to 1500 watts @ 10/1000 µs  
(see Figure 1)*  
Protection for aircraft fast data rate lines up to Level 5  
Waveform 4 and Level 2 Waveform 5A in RTCA/DO-  
160D (also see MicroNote 130) & ARINC 429 with bit  
rates of 100 kb/s (per ARINC 429, Part 1, par 2.4.1.1)  
•
•
•
•
Clamps transient in less than 100 pico seconds  
Working voltage (VWM) range 6.5 V to 170 V  
Hermetic sealed DO-13 metal package  
•
•
ESD & EFT protection per IEC 61000-4-2 and -4-4  
Secondary lightning protection per IEC61000-4-5 with  
42 Ohms source impedance:  
Class 1: LC6.5 to LC170A  
Class 2: LC6.5 to LC150A  
Class 3: LC6.5 to LC70A  
Class 4: LC6.5 to LC36A  
Options for screening in accordance with MIL-PRF-  
19500 for JAN, JANTX, JANTXV, and JANS are also  
available by adding MQ, MX, MV, MSP prefixes  
respectively to part numbers, e.g. MXLC6.5A, etc.  
•
Surface mount equivalent packages also available as  
SMCJLCE6.5 - SMCJLCE170A or SMCGLCE6.5 -  
SMCGLCE170A in separate data sheet (consult factory  
for other surface mount options)  
•
Secondary lightning protection per IEC61000-4-5 with  
12 Ohms source impedance:  
Class 1 : LC6.5 to LC90A  
Class 2: LC6.5 to LC45 A  
Class 3: LC6.5 to LC22A  
Class 4: LC6.5 to LC11A  
•
•
Plastic axial-leaded equivalents available in the LCE6.5  
- LCE170A series in separate data sheet  
RoHS Compliant devices available by adding “e3” suffix  
•
•
Secondary lightning protection per IEC61000-4-5 with  
2 Ohms source impedance:  
Class 2: LC6.5 to LC20A  
Class 3: LC6.5 to LC10A  
Inherently radiation hard per Microsemi MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
• 1500 Watts at 10/1000 μs with repetition rate of 0.01% or  
•
CASE: DO-13 (DO-202AA), welded, hermetically  
sealed metal and glass  
less* at lead temperature (TL) 25oC (see Figs. 1, 2, & 4)  
• Operating & Storage Temperatures: -65o to +175oC  
•
•
FINISH: All external metal surfaces are Tin-Lead  
plated and solderable per MIL-STD-750 method 2026  
• THERMAL RESISTANCE: 50oC/W (Typical) junction to  
lead at 0.375 inches (10 mm) from body or 110 oC/W  
junction to ambient when mounted on FR4 PC board with  
4 mm2 copper pads (1 oz) and track width 1 mm, length  
25 mm  
POLARITY: Cathode connected to case as shown by  
diode symbol (cathode positive for normal operation)  
•
•
•
MARKING: Part number and polarity diode symbol  
WEIGHT: 1.4 grams. (Approx)  
• DC Power Dissipation*: 1 Watt at TL < +125oC 3/8” (10  
mm) from body (see derating in Fig 3 and note below)  
• Solder Temperatures: 260 o C for 10 s (maximum)  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
•
See package dimension on last page  
* TVS devices are not typically used for dc power dissipation and are instead operated < VWM (rated standoff voltage) except for transients that briefly  
drive the device into avalanche breakdown (VBR to VC region) of the TVS element. Also see Figures 3 and 4 for further protection details in rated peak  
pulse power for unidirectional and bidirectional configurations respectively.  
Copyright © 2008  
Microsemi  
Page 1  
10-29-2008 REV E  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

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