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MPTE-12RL4G PDF预览

MPTE-12RL4G

更新时间: 2024-01-08 18:36:42
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
8页 80K
描述
1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors

MPTE-12RL4G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:LEAD FREE, PLASTIC, MOSORB, CASE 41A-04, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:1 week风险等级:5.22
其他特性:EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE最小击穿电压:14.1 V
外壳连接:ISOLATED最大钳位电压:21.2 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified最大重复峰值反向电压:12 V
子类别:Transient Suppressors表面贴装:NO
技术:ZENER端子面层:Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

MPTE-12RL4G 数据手册

 浏览型号MPTE-12RL4G的Datasheet PDF文件第2页浏览型号MPTE-12RL4G的Datasheet PDF文件第3页浏览型号MPTE-12RL4G的Datasheet PDF文件第4页浏览型号MPTE-12RL4G的Datasheet PDF文件第5页浏览型号MPTE-12RL4G的Datasheet PDF文件第6页浏览型号MPTE-12RL4G的Datasheet PDF文件第7页 
1N6373 − 1N6381 Series  
(ICTE−5 − ICTE−36,  
MPTE−5 − MPTE−45)  
1500 Watt Peak Power  
Mosorbt Zener Transient  
Voltage Suppressors  
http://onsemi.com  
Unidirectional*  
Cathode  
Anode  
Mosorb devices are designed to protect voltage sensitive  
components from high voltage, high−energy transients. They have  
excellent clamping capability, high surge capability, low zener  
impedance and fast response time. These devices are  
ON Semiconductor’s exclusive, cost-effective, highly reliable  
Surmetict axial leaded package and are ideally-suited for use in  
communication systems, numerical controls, process controls,  
medical equipment, business machines, power supplies and many  
other industrial/consumer applications, to protect CMOS, MOS and  
Bipolar integrated circuits.  
AXIAL LEAD  
CASE 41A  
PLASTIC  
MARKING DIAGRAMS  
A
MPTE  
−xx  
1N  
63xx  
YYWWG  
G
Specification Features  
Working Peak Reverse Voltage Range − 5.0 V to 45 V  
Peak Power − 1500 Watts @ 1 ms  
A
ICTE  
−xx  
ESD Rating of Class 3 (>16 KV) per Human Body Model  
Maximum Clamp Voltage @ Peak Pulse Current  
Low Leakage < 5 mA Above 10 V  
YYWWG  
G
A
= Assembly Location  
Response Time is Typically < 1 ns  
Pb−Free Packages are Available*  
MPTE−xx = ON Device Code  
1N63xx = JEDEC Device Code  
ICTE−xx = ON Device Code  
Mechanical Characteristics  
YY  
WW  
G
= Year  
= Work Week  
= Pb−Free Package  
CASE: Void-free, transfer-molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
(Note: Microdot may be in either location)  
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:  
230°C, 1/16from the case for 10 seconds  
ORDERING INFORMATION  
POLARITY: Cathode indicated by polarity band  
MOUNTING POSITION: Any  
Device  
Package  
Shipping  
MPTE−xx, G  
Axial Lead  
(Pb−Free)  
500 Units/Box  
MPTE−xxRL4, G  
ICTE−xx, G  
Axial Lead 1500/Tape & Reel  
(Pb−Free)  
Axial Lead  
(Pb−Free)  
500 Units/Box  
ICTE−xxRL4, G  
Axial Lead 1500/Tape & Reel  
(Pb−Free)  
1N63xx, G  
Axial Lead  
(Pb−Free)  
500 Units/Box  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
1N63xxRL4, G  
Axial Lead 1500/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 4  
1N6373/D  

MPTE-12RL4G 替代型号

型号 品牌 替代类型 描述 数据表
1N6376RL4G ONSEMI

完全替代

1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
1N6376G ONSEMI

完全替代

1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors

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