Datasheet > MPSH10_07

MPSH10_07

更新时间： 2024-10-01 03:40:55

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
3页	83K
描述
VHF/UHF Transistors NPN Silicon

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中文翻译

获取价格

数据手册

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MPSH10_07 数据手册

MPSH10

Preferred Device

VHF/UHF Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

http://onsemi.com

COLLECTOR

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

CEO

CBO

EBO

Vdc

BASE

Collector−Base Voltage

Emitter−Base Voltage

Vdc

3.0

EMITTER

Total Device Dissipation @ T = 25°C

350

2.8

mW/°C

Derate above 25°C

Total Device Dissipation @ T = 25°C

1.0

8.0

mW/°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

THERMAL CHARACTERISTICS

TO−92

CASE 29−11

STYLE 2

Characteristic

Symbol

Max

200357

125

Unit

°C/W

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MARKING DIAGRAM

MPS

H10

AYWW G

= Assembly Location

= Year

WW = Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

February, 2007 − Rev. 3

MPSH10/D

12 3

中文翻译

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