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MPSA94U PDF预览

MPSA94U

更新时间: 2024-11-18 05:50:03
品牌 Logo 应用领域
商升特 - SEMTECH 晶体晶体管
页数 文件大小 规格书
3页 305K
描述
PNP Silicon Epitaxial Planar Transistor

MPSA94U 数据手册

 浏览型号MPSA94U的Datasheet PDF文件第2页浏览型号MPSA94U的Datasheet PDF文件第3页 
MPSA94U  
PNP Silicon Epitaxial Planar Transistor  
for high voltage switching and amplifier applications  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
Value  
Unit  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Collector Current  
-VCBO  
-VCEO  
-VEBO  
-IC  
400  
V
V
400  
6
300  
V
mA  
mW  
625  
Total Power Dissipation  
Junction Temperature  
Storage Temperature Range  
Ptot  
O
C
TJ  
150  
O
C
Tstg  
- 55 to + 150  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Min.  
Max.  
Unit  
DC Current Gain  
at -VCE = 10 V, -IC = 1 mA  
at -VCE = 10 V, -IC = 10 mA  
at -VCE = 10 V, -IC = 50 mA  
at -VCE = 10 V, -IC = 100 mA  
hFE  
hFE  
hFE  
hFE  
70  
80  
70  
60  
-
-
-
-
-
300  
-
-
Collector Base Cutoff Current  
at -VCB = 300 V  
-ICBO  
-ICES  
-
-
0.1  
µA  
µA  
µA  
V
Collector Emitter Cutoff Current  
at -VCE = 400 V  
1
0.1  
-
Emitter Base Cutoff Current  
at -VEB = 4 V  
-IEBO  
-
Collector Base Breakdown Voltage  
at -IC = 100 µA  
-V(BR)CBO  
-V(BR)CEO  
-V(BR)EBO  
400  
400  
6
Collector Emitter Breakdown Voltage  
at -IC = 1 mA  
-
V
Emitter Base Breakdown Voltage  
at -IE = 10 µA  
-
V
Collector Emitter Saturation Voltage  
at -IC = 10 mA, -IB = 1 mA  
at -IC = 50 mA, -IB = 5 mA  
-
-
0.2  
0.5  
-VCE(sat)  
V
Base Emitter Saturation Voltage  
at -IC = 10 mA, -IB = 1 mA  
-VBE(sat)  
Cob  
-
-
0.75  
7
V
Collector Output Capacitance  
at -VCB = 20 V, f = 1 MHz  
pF  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 12/11/2008  

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