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MPSA92TRE PDF预览

MPSA92TRE

更新时间: 2023-01-03 05:15:10
品牌 Logo 应用领域
CENTRAL 晶体管
页数 文件大小 规格书
3页 515K
描述
Small Signal Bipolar Transistor, 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,

MPSA92TRE 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:unknown
风险等级:5.03集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):25
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

MPSA92TRE 数据手册

 浏览型号MPSA92TRE的Datasheet PDF文件第2页浏览型号MPSA92TRE的Datasheet PDF文件第3页 
MPSA92  
MPSA93  
www.centralsemi.com  
SILICON  
HIGH VOLTAGE  
PNP TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR MPSA92 and  
MPSA93 are silicon PNP transistors designed for  
high voltage applications.  
MARKING: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
MPSA92  
300  
MPSA93  
200  
UNITS  
V
A
V
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
300  
200  
V
V
5.0  
500  
625  
Continuous Collector Current  
Power Dissipation  
I
mA  
mW  
°C  
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
200  
J
stg  
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
MPSA92  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V
V
V
=200V  
=160V  
=3.0V  
-
250  
-
-
nA  
CBO  
CEO  
EBO  
CB  
CE  
EB  
-
-
-
-
-
250  
nA  
nA  
V
100  
100  
BV  
BV  
BV  
I =100μA  
300  
300  
5.0  
-
-
200  
200  
5.0  
-
-
CBO  
CEO  
EBO  
C
I =1.0mA  
-
-
V
C
I =100μA  
-
0.5  
0.9  
-
-
0.4  
0.9  
-
V
E
V
V
I =20mA, I =2.0mA  
V
CE(SAT)  
BE(SAT)  
FE  
C
B
I =20mA, I =2.0mA  
-
-
V
C
B
h
h
h
V
=10V, I =1.0mA  
25  
40  
25  
50  
-
25  
40  
25  
50  
-
CE  
CE  
CE  
CE  
CB  
C
V
V
V
V
=10V, I =10mA  
-
-
FE  
C
=10V, I =30mA  
-
-
FE  
C
f
=20V, I =10mA, f=100MHz  
-
-
MHz  
pF  
T
C
C
=20V, I =0, f=1.0MHz  
6.0  
8.0  
ob  
E
R1 (8-November 2013)  

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