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MPSA93 PDF预览

MPSA93

更新时间: 2024-01-29 22:21:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管高压IOT
页数 文件大小 规格书
4页 90K
描述
High Voltage Transistors(PNP Silicon)

MPSA93 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):0.5 A
配置:Single最小直流电流增益 (hFE):25
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.625 W子类别:Other Transistors
表面贴装:NO标称过渡频率 (fT):50 MHz
Base Number Matches:1

MPSA93 数据手册

 浏览型号MPSA93的Datasheet PDF文件第2页浏览型号MPSA93的Datasheet PDF文件第3页浏览型号MPSA93的Datasheet PDF文件第4页 
Order this document  
by MPSA92/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
3
*Motorola Preferred Device  
2
BASE  
1
EMITTER  
1
MAXIMUM RATINGS  
2
3
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
MPSA92 MPSA93  
Unit  
Vdc  
CASE 29–11, STYLE 1  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
–300  
–300  
–200  
–200  
Vdc  
–5.0  
Vdc  
Collector Current — Continuous  
I
C
–500  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
(I = –1.0 mAdc, I = 0)  
V
Vdc  
(BR)CEO  
MPSA92  
MPSA93  
–300  
–200  
C
B
CollectorBase Breakdown Voltage  
(I = –100 Adc, I = 0)  
V
Vdc  
(BR)CBO  
MPSA92  
MPSA93  
–300  
–200  
C
E
EmitterBase Breakdown Voltage  
(I = –100 Adc, I = 0)  
V
–5.0  
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
I
µAdc  
CBO  
(V  
CB  
(V  
CB  
= –200 Vdc, I = 0)  
MPSA92  
MPSA93  
–0.25  
–0.25  
E
= –160 Vdc, I = 0)  
E
Emitter Cutoff Current  
(V = –3.0 Vdc, I = 0)  
I
–0.1  
µAdc  
EBO  
EB  
C
1. Pulse Test: Pulse Width  
300 s, Duty Cycle  
2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1998  

MPSA93 替代型号

型号 品牌 替代类型 描述 数据表
MPSA93G ONSEMI

完全替代

High Voltage Transistors
MPSA93RLRMG ONSEMI

类似代替

High Voltage Transistors

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