MPSA28

更新时间： 2024-11-27 22:51:11

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管达林顿晶体管
页数	文件大小	规格书
4页	133K
描述
Darlington Transistors(NPN Silicon)

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数据手册

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MPSA28 数据手册

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SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

COLLECTOR 3

*Motorola Preferred Device

BASE

EMITTER 1

MAXIMUM RATINGS

Rating

Symbol MPSA28

MPSA29

100

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

CES

CBO

EBO

100

Vdc

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Vdc

500

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

J stg

–55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage

Vdc

(BR)CES

(BR)CBO

(BR)EBO

(I = 100 µAdc, V

C BE

= 0)

MPSA28

MPSA29

100

—

Collector–Base Breakdown Voltage

(I = 100 Adc, I = 0)

Vdc

MPSA28

MPSA29

100

—

Emitter–Base Breakdown Voltage

(I = 10 Adc, I = 0)

—

Vdc

Collector Cutoff Current

nAdc

CBO

= 60 Vdc, I = 0)

MPSA28

MPSA29

—

100

= 80 Vdc, I = 0)

Collector Cutoff Current

nAdc

CES

= 60 Vdc, V

= 80 Vdc, V

= 0)

MPSA28

MPSA29

—

500

Emitter Cutoff Current

(V = 10 Vdc, I = 0)

—

100

EBO

Preferred devices are Motorola recommended choices for future use and best overall value.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4

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