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MPSA06

更新时间: 2024-11-17 22:51:11
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
1页 348K
描述
NPN Small Signal Transistor 625 mW

MPSA06 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.16
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

MPSA06 数据手册

  
M C C  
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21201 Itasca Street Chatsworth  
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MPSA06  
Features  
l
NPN Silicon Epitaxial planar Transistor for switching and  
NPN Small  
Signal Transistor  
625 mW  
amplifier applications  
l As complementary type, the PNP transistor is MPSA56  
l On special request, this transistor is also manufactured  
in the pin configuration TO-18  
Mechanical Data  
l Case: TO-92, Molded Plastic  
TO-92  
A
E
l Weight: 0.18 grams (Approx.)  
Maximum Ratings @ 25oC Unless Otherwise Specified  
Characteristic  
Collect to Base Voltage  
Symbol  
VCBO  
Value  
80  
Unit  
V
B
VCEO  
VEBO  
IC  
Collect to Emitter Voltage  
Emitter to Base Voltage  
80  
V
4.0  
V
Collect Current  
500  
625  
1.5  
mA  
mW  
W
Total Power Dissipation @ TA=25oC  
Total Power Dissipation @ TC=25oC  
Ptot  
Ptot  
C
Thermal Resistance Junction to  
Ambient  
oC/W  
R
JA  
200  
oC  
oC  
Junction Temperature  
Storage Temperature  
Tj  
TSTG  
150  
-55 to 150  
Electrical Characteristics @ 25oC Unless Otherwise Specified  
D
Charateristic  
Symbol Min Max Unit  
Test Cond.  
Collector Cut-off Current  
ICBO  
100  
nA VCB=80V, IE =0  
Collector to Emitter  
Saturatuion Voltage  
VCE(sat)  
0.25  
V
IC=100mA, I B=10mA  
VCE=1V, IC=10mA  
VCE=1V, IC=100mA  
100  
100  
hFE  
DC Current Gain  
G
VCE=2V, IC=20mA,  
f=100MHz  
DIMENSIONS  
fT  
V(BR)CEO  
V(BR)EBO  
Gain Bandwidth Product  
100  
MHz  
INCHES  
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
MM  
MIN  
Collector-Emitter  
Breakdown Voltage  
DIM  
A
B
C
D
MAX  
MAX  
4.70  
4.70  
---  
NOTE  
V
V
IC=1mA, I B=0  
80  
4
.185  
.185  
---  
.020  
.145  
.105  
4.45  
4.46  
12.7  
0.41  
3.43  
2.42  
Emitter-Base  
Breakdown Voltage  
u
IE=100 A, IC=0  
0.63  
3.68  
2.67  
E
G
Base-Emitter ON  
Voltage  
VBE(ON)  
1.2  
V
IC=10mA, IB =1mA  
Note: Valid provided that leads are kept at ambient temperature.  
www.mccsemi.com  

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