Datasheet > MPSA06

MPSA06

更新时间： 2024-11-22 14:51:35

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
3页	700K
描述
双极型晶体管

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中文翻译

获取价格

技术参数
数据手册

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MPSA06 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	80
Collector Current - Continuous：	0.5	DC current gain - Min：	100
DC current gain - Max：	400	Transition frequency：	100
Package：	TO-92	Storage Temperature Range：	-55-150
class：	Transistors

MPSA06 数据手册

MPSA06

TO-92 Transistor (NPN)

TO-92

EMITTER

2. BASE

3. COLLECTOR

Features

Power amplifier

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Units

Collector-Emitter Voltage

Emitter-Base Voltage

Dimensions in inches and (millimeters)

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

0.5

P_C

625

150

-55-150

417

T_J

℃

T_stg

Storage Temperature

℃

R_θJA

Thermal Resistance,Junction to Ambient

℃/W

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100μA, I_E=0

V_(BR)CEOI_C= 1mA , I_B=0

V_(BR)EBO

I_CBO

I_E=100μA, I_C=0

V_CB=80V, I_E=0

0.1

400

μA

Collector cut-off current

I_CEO

V_CE=60V, I_B=0

Emitter cut-off current

I_EBO

V_EB=3V, I_C=0

h_FE1

V_CE=1V, I_C= 100mA

V_CE=1V, I_C= 10mA

I_C=100mA, I_B=10mA

I_C= 100mA, I_B=10mA

100

DC current gain

h_FE2

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

0.25

1.2

_CE=2V, I_C= 10mA

Transition frequency

f_T

100

MHz

f = 100MHz

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3

中文翻译

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与MPSA06相关器件

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MPSA06/D10Z-18	TI	获取价格	80V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
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