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MPSA06 PDF预览

MPSA06

更新时间: 2024-11-18 05:50:03
品牌 Logo 应用领域
RECTRON 晶体晶体管
页数 文件大小 规格书
1页 76K
描述
Plastic Package Transistors (NPN)

MPSA06 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.05
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):265
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

MPSA06 数据手册

  
MPSA06  
TECHNICAL SPECIFICATION  
Plastic Package Transistors (NPN)  
Dimensions  
Absolute Maximun Ratings (Ta=25oC)  
TO- 92  
Items  
Symbol Ratings  
Unit  
V
VCBO  
VCEO  
VEBO  
PD  
Collector - Base  
80  
80  
Collector - Emitter  
Emitter - Base  
V
V
4
Power Dissipation  
Collector Current  
Junction to Case  
Junction to Ambient  
625  
500  
83.3  
200  
mW  
mA  
IC  
Rth (JC)  
Rth (JA) (1)  
°C/W  
° C/W  
(1) Device soldered to a typical PCB  
D IM  
A
M IN  
4 .3 2  
4 .4 5  
3 .1 8  
0 .4 1  
0 .3 5  
M A X  
5 .3 3  
5 .2  
B
Pin Configuration  
C
4 .1 9  
0 .5 0  
0 .5 0  
Code Style  
TO - 92  
Pin 1  
Pin 2  
Base  
Pin 3  
D
E
Collector  
Emitter  
F
5
5
G
1 .1 4  
1 .4 0  
H
1 .1 4  
1 .5 3  
-
K
1 2 .7 0  
All dimensions in mm  
Electrical Characteristics (Ta=25oC)  
Description  
Symbol  
VCEO  
VEBO  
ICEO  
Test Conditions  
Min  
80  
4
Typ  
Max  
Units  
V
Collector - Emitter Breakdown Voltage  
Emitter - Base Voltage  
IC = 1mA, IB = 0  
IE = 100uA, IC = 0  
VCE = 60V, IB = 0  
V
A
0.1  
0.1  
µ
Collector - Cut off Current  
DC Current Gain  
A
µ
ICBO  
VCB = 80V, IE = 0  
IC = 10mA, VCE = 1V  
IC = 100mA, VCE = 1V  
100  
100  
hFE  
Collector Emitter (sat) Voltage  
Base Emitter (on) Voltage  
VCE (sat) IC = 100mA, IB = 10mA  
VBE (on) IC = 100mA, VCE = 1V  
0.25  
1.2  
V
V
Dynamic Characteristics (Ta=25oC)  
IC = 10mA VCE = 2V  
fT  
Current gain Bandwidth Product  
100  
MHz  
f = 100 MHz  

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