Datasheet > MPSA06

MPSA06

更新时间： 2024-11-18 04:39:15

品牌	Logo	应用领域
友顺 - UTC		晶体放大器晶体管
页数	文件大小	规格书
5页	187K
描述
AMPLIFIER TRANSISTOR

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中文翻译

获取价格

数据手册

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MPSA06 数据手册

UTC MPSA06/56

AMPLIFIER TRANSISTOR

NPN MPSA06

PNP MPSA56

FEATURES

*Collector-Emitter Voltage: VCEO=80V

*Collector Dissipation: P_D=625mW

TO-92

1: EMITTER 2: BASE 3: COLLECTOR

ABSOLUTE MAXIMUM RATINGS ^(T_A^{=25°C, unless otherwise specified)}

PARAMETER

Collector-base voltage

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

mW/°C

°C

500

625

Collector-emitter voltage

Emitter-base voltage

Collector current - Continuous

Total device dissipation, @T_A=25°C

Derate above 25°C

Total device dissipation, @T_C=25°C

Derate above 25°C

1500

Junction Temperature

Storage Temperature

TSTG

-55 ~ +150

°C

THERMAL CHARACTERISTICS

PARAMETER

Thermal resistance, junction to ambient

Thermal resistance, junction to case

SYMBOL

RθJA (note)

RθJC

MAX

200

83.3

UNIT

°C/W

Note: RθJA is measured with the device soldered into a typical printed circuit board.

ELECTRICAL CHARACTERISTICS ^{(Ta=25°C, unless otherwise specified)}

PARAMETER

OFF CHARACTERISTICS

Collector-emitter breakdown voltage

(note 1)

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

V_(BR)CEO

I_C=1.0mA, I_B=0

Emitter-base breakdown voltage

Collector cutoff current

V_(BR)EBO

I_CES

I_CBO

I_E=100µA, Ic=0

V_CE=60V, I_B=0

V_CB=80V, I_E=0

µA

0.1

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R201-035,A

12 3 4 5

中文翻译

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与MPSA06相关器件

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