5秒后页面跳转
MPQ3725 PDF预览

MPQ3725

更新时间: 2024-09-27 20:31:27
品牌 Logo 应用领域
安森美 - ONSEMI 放大器光电二极管晶体管
页数 文件大小 规格书
6页 132K
描述
40V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-116

MPQ3725 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:IN-LINE, R-PDIP-T14针数:14
Reach Compliance Code:unknown风险等级:5.66
Is Samacsys:N基于收集器的最大容量:10 pF
集电极-发射极最大电压:40 V配置:SEPARATE, 4 ELEMENTS
最小直流电流增益 (hFE):35JEDEC-95代码:TO-116
JESD-30 代码:R-PDIP-T14元件数量:4
端子数量:14封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

MPQ3725 数据手册

 浏览型号MPQ3725的Datasheet PDF文件第2页浏览型号MPQ3725的Datasheet PDF文件第3页浏览型号MPQ3725的Datasheet PDF文件第4页浏览型号MPQ3725的Datasheet PDF文件第5页浏览型号MPQ3725的Datasheet PDF文件第6页 
Order this document  
by MPQ3725/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
Motorola Preferred Device  
14 13 12  
11 10  
9
6
8
7
NPN  
1
2
3
4
5
MAXIMUM RATINGS  
14  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
1
CollectorEmitter Voltage  
CollectorEmitter Voltage  
EmitterBase Voltage  
V
CEO  
40  
60  
CASE 646–06, STYLE 1  
TO–116  
V
CES  
EBO  
V
5.0  
1.0  
Collector Current — Continuous  
I
C
Four  
Transistors  
One  
Transistor  
Equal Power  
Total Device Dissipation  
P
D
@ T = 25°C  
1.0  
8.0  
2.5  
20  
Watts  
mW/°C  
A
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
–55 to +150  
°C  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Effective  
Unit  
One  
For Four  
Transistor Transistors  
Thermal Resistance,  
Junction to Ambient  
R
125 50  
°C/W  
JA  
(1)  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
(2)  
CollectorEmitter Breakdown Voltage  
V
40  
60  
5.0  
Vdc  
Vdc  
Vdc  
Adc  
(BR)CEO  
(I = 10 mAdc, I = 0)  
C
B
CollectorEmitter Breakdown Voltage  
(I = 100 Adc, V = 0)  
V
(BR)CES  
(BR)EBO  
C
BE  
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
E
C
Collector Cutoff Current  
(V = 40 Vdc, I = 0)  
I
0.5  
CBO  
CB  
E
1. R  
is measured with the device soldered into a typical printed circuit board.  
JA  
2. Pulse Test: Pulse Width  
300 s; Duty Cycle  
2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 3  
Motorola, Inc. 1997

与MPQ3725相关器件

型号 品牌 获取价格 描述 数据表
MPQ3725A CENTRAL

获取价格

QUAD TRANSISTORS
MPQ3725ALEADFREE CENTRAL

获取价格

暂无描述
MPQ3725APBFREE CENTRAL

获取价格

暂无描述
MPQ3725PBFREE CENTRAL

获取价格

Power Bipolar Transistor,
MPQ3762 MOTOROLA

获取价格

Power Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon, TO-116, Plasti
MPQ3762 CENTRAL

获取价格

QUAD TRANSISTORS
MPQ3762LEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 40V V(BR)CEO, 4-Element, PNP, Silicon, TO-116,
MPQ3762TIN/LEAD CENTRAL

获取价格

Small Signal Bipolar Transistor,
MPQ3798 CENTRAL

获取价格

PNP SILICON QUAD TRANSISTOR
MPQ3798PBFREE CENTRAL

获取价格

Small Signal Bipolar Transistor,