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MPQ3799TIN/LEAD

更新时间： 2024-02-25 14:05:43

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	148K
描述
Small Signal Bipolar Transistor,

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技术参数
数据手册

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MPQ3799TIN/LEAD 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	not_compliant
风险等级：	5.79	JESD-609代码：	e0
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

MPQ3799TIN/LEAD 数据手册

MPQ3798

MPQ3799

PNP SILICON QUAD TRANSISTOR

TO-116 CASE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MPQ3798, MPQ3799 types are comprised of four independent Silicon PNP

Transistors mounted in a 14 PIN DIP, designed for low level and low noise applications.

MAXIMUM RATINGS: (T =25°C)

SYMBOL

MPQ3798

MPQ3799

UNITS

Collector-Base Voltage

CBO

Collector-Emitter Voltage

Emitter-Base Voltage

CEO

5.0

EBO

Collector Current

Power Dissipation (Each Transistor)

Power Dissipation (Total Package)

500

900

Operating and Storage

Junction Temperature

T ,T

-65 to +150

139

°C

J stg

Thermal Resistance (Total Package)

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

MPQ3798

MPQ3799

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

=50V

CBO

=3.0V

EBO

I =10µA

CBO

CEO

EBO

I =10mA

I =10µA

5.0

I =100µA, I =10µA

0.2

0.25

0.7

0.2

0.25

0.7

CE(SAT)

BE(SAT)

I =1.0mA, I =100µA

I =100µA, I =10µA

I =1.0mA, I =100µA

0.8

=5.0V, I =10µA

100

150

125

225

300

250

=5.0V, I =100µA

=5.0V, I =500µA

=5.0V, I =10mA

=5.0V, I =1.0mA, f=100MHz

MHz

=5.0V, I =0, f=1.0MHz

=0.5V, I =0, f=1.0MHz

4.0

8.0

4.0

8.0

=10V, I =100µA, R =3kΩ,

C S

f=10Hz to 15.7kHz

2.5 TYP

1.5 TYP

(SEE REVERSE SIDE)

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