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MPLAD30KP200AE3 PDF预览

MPLAD30KP200AE3

更新时间： 2024-11-27 17:54:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
6页 392K
描述
Trans Voltage Suppressor Diode, 30000W, 200V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-1

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中文翻译

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MPLAD30KP200AE3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-1
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.58
其他特性：HIGH RELIABILITY最大击穿电压：245 V
最小击穿电压：222 V击穿电压标称值：233.5 V
外壳连接：CATHODE最大钳位电压：322 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：S-PSSO-G1
最大非重复峰值反向功率耗散：30000 W元件数量：1
端子数量：1最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：SQUARE封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：2.5 W认证状态：Not Qualified
参考标准：MIL-19500最大重复峰值反向电压：200 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MPLAD30KP200AE3 数据手册

 浏览型号MPLAD30KP200AE3的Datasheet PDF文件第2页浏览型号MPLAD30KP200AE3的Datasheet PDF文件第3页浏览型号MPLAD30KP200AE3的Datasheet PDF文件第4页浏览型号MPLAD30KP200AE3的Datasheet PDF文件第5页浏览型号MPLAD30KP200AE3的Datasheet PDF文件第6页 
MPLAD30KP14A –  
MPLAD30KP400CA  
High-Reliability  
screening available in  
reference to  
Surface Mount 30,000 Watt Transient  
Voltage Suppressor  
DESCRIPTION  
Available  
MIL-PRF-19500  
These high power 30 kW rated transient voltage suppressors in a surface mount package are  
provided with design features to minimize thermal resistance and cumulative heating. Typical  
applications include lightning and automotive load dump protection. They are particularly effective at  
meeting the multi-stroke lightning standard RTCA DO-160, section 22 for aircraft design. This  
efficient low profile package design is offered in standoff voltage selections (VWM) of 14 volts to  
400 volts in either unidirectional or bidirectional construction.  
Important: For the latest information, visit our website http://www.microsemi.com.  
FEATURES  
•
•
•
•
•
Available in both unidirectional and bidirectional construction (bidirectional with CA suffix)  
High reliability with wafer fabrication and assembly lot traceability  
All parts surge tested  
PLAD  
(The cathode is the metal base  
under the body of this device.)  
Low profile surface mount package  
Optional upscreening is available with various screening and conformance inspection options based  
on MIL-PRF-19500. Refer to Hirel Non-Hermetic Product Portfolio brochure on our web site for more  
details on the screening options.  
Also available:  
•
•
•
•
Suppresses transients up to 30,000 W @ 10/1000 μs (see Figure 1)  
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS compliant versions are available  
PLAD15KP  
(15,000 watts)  
MPLAD15KP7.0A thru  
MPLAD15KP200CA  
3σ lot norm screening performed on standby current (ID)  
APPLICATIONS / BENEFITS  
•
•
•
Protection from switching transients and induced RFI  
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4  
Secondary lightning protection per IEC 61000-4-5 with 42 ohms source impedance:  
Class 1,2,3,4,5: MPLAD30KP14A to 400CA  
Class 5: MPLAD30KP14A to 400CA (short distance)  
Class 5: MPLAD30KP14A to 220CA (long distance)  
Secondary lightning protection per IEC 61000-4-5 with 12 ohms source impedance:  
Class 1,2,3: MPLAD30KP14A to 400CA  
•
•
Class 4: MPLAD30KP14A to 220CA  
MSC – Lawrence  
6 Lake Street,  
Secondary lightning protection per IEC 61000-4-5 with 2 ohms source impedance:  
Class 2: MPLAD30KP10A to 400CA  
Lawrence, MA 01841  
Tel: 1-800-446-1158 or  
(978) 620-2600  
Class 3: MPLAD30KP14A to 220CA  
Class 4: MPLAD30KP14A to 110CA  
Fax: (978) 689-0803  
•
•
Pin injection protection per RTCA/DO-160F for Waveform 4 (6.4/69 μs @ 25°C)*:  
Level 4: MPLAD30KP14A to 400CA  
MSC – Ireland  
Level 5: MPLAD30KP14A to 260CA  
Gort Road Business Park,  
Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044  
Fax: +353 (0) 65 6822298  
Pin injection protection per RTCA/DO-160F for Waveform 5A (40/120 μs @25°C)*:  
Level 4: MPLAD30KP14A to 64CA  
Level 5: MPLAD30KP14A to 26CA  
Website:  
www.microsemi.com  
*See MicroNote 132 for further temperature derating selection.  
RF01005, Rev G (5/16/14)  
©2013 Microsemi Corporation  
Page 1 of 6  
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MPLAD30KP200AE3 替代型号

型号 品牌 替代类型 描述 数据表
MXLPLAD30KP200AE3 MICROSEMI

完全替代

 Trans Voltage Suppressor Diode, 30000W, 200V V(RWM), Unidirectional, 1 Element, Silicon, R
MXLPLAD30KP200A MICROSEMI

完全替代

 Trans Voltage Suppressor Diode, 30000W, 200V V(RWM), Unidirectional, 1 Element, Silicon, P

与MPLAD30KP200AE3相关器件

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MPLAD30KP200AE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 200V V(RWM), Unidirectional, 1 Element, Silicon, R
MPLAD30KP200AE3TR MICROSEMI

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 		30000W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-1
MPLAD30KP200ATR MICROSEMI

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 		30000W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-1
MPLAD30KP200CA/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 200V V(RWM), Bidirectional, 1 Element, Silicon, PL
MPLAD30KP200CAE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 200V V(RWM), Bidirectional, 1 Element, Silicon, RO
MPLAD30KP200CAE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 200V V(RWM), Bidirectional, 1 Element, Silicon, RO
MPLAD30KP200CAE3TR MICROSEMI

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 		30000W, BIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-1
MPLAD30KP200CATR MICROSEMI

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 		30000W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-1
MPLAD30KP20A/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 20V V(RWM), Unidirectional, 1 Element, Silicon
MPLAD30KP20AE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 20V V(RWM), Unidirectional, 1 Element, Silicon, RO

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