是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | R-PSSO-G1 |
针数: | 1 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.43 | 其他特性: | HIGH RELIABILITY |
最大击穿电压: | 147 V | 最小击穿电压: | 133 V |
击穿电压标称值: | 140 V | 外壳连接: | CATHODE |
最大钳位电压: | 193 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | R-PSSO-G1 | JESD-609代码: | e0 |
湿度敏感等级: | 1 | 最大非重复峰值反向功率耗散: | 30000 W |
元件数量: | 1 | 端子数量: | 1 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | BIDIRECTIONAL | 最大功率耗散: | 2.5 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 120 V |
子类别: | Transient Suppressors | 表面贴装: | YES |
技术: | AVALANCHE | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MPLAD30KP130A | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, P | |
MPLAD30KP130A/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, P | |
MPLAD30KP130AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, R | |
MPLAD30KP130AE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Unidirectional, 1 Element, Silicon | |
MPLAD30KP130AE3TR | MICROSEMI |
获取价格 |
30000W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-1 | |
MPLAD30KP130ATR | MICROSEMI |
获取价格 |
30000W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-1 | |
MPLAD30KP130CA | MICROSEMI |
获取价格 |
暂无描述 | |
MPLAD30KP130CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, RO | |
MPLAD30KP130CAE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, RO | |
MPLAD30KP130CATR | MICROSEMI |
获取价格 |
30000W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-1 |