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MPLAD15KP90AE3

更新时间： 2024-11-25 06:47:31
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 290K
描述
Trans Voltage Suppressor Diode, 15000W, 90V V(RWM), Unidirectional, 1 Element, Silicon

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MPLAD15KP90AE3 数据手册

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TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
SURFACE MOUNT 15,000 W  
Transient Voltage Suppressor  
- Unidirectional (A) and Bidirectional (CA) construction  
- Selections for 7.0 to 200 V standoff voltages (VWM  
- Fast response  
)
LEVELS  
M, MA, MX, MXL  
DEVICES  
MPLAD15KP7.0A thru MPLAD15KP200CA, e3  
FEATURES  
.
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Low profile surface mount  
Optional up screening available by replacing the M prefix with MA, MX or MXL. These prefixes specify  
various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote  
129 for more details on the screening options  
.
.
.
.
Suppresses transients up to 15,000 W @ 10/1000 µs (see Figure 1)  
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS compliant devices available by adding an “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
.
.
.
Protection from switching transients and induced RF  
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4  
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:  
o
Class 1,2,3,4,5: MPLAD15KP7.0A to 200CA  
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:  
Class 1,2,3,4: MPLAD15KP7.0A to 200CA  
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:  
.
.
o
o
o
Class 2,3: MPLAD15KP7.0A to 200CA  
Class 4: MPLAD15KP5.0 to 54CA  
.
.
Pin injection protection per RTCA/DO-160D for Waveform 4 (6.4/69 µs):  
o
o
Level 4: MPLAD15KP7.0A to 200CA  
Level 5: MPLAD15KP7.0A to 100CA  
Pin injection protection per RTCA/DO-160D for Waveform 5A (40/120 µs):  
Level 4: MPLAD15KP7.0A to 28CA  
o
MAXIMUM RATINGS  
.
Peak Pulse Power dissipation at 25 °C: 15,000 watts at 10/1000 μs (also see Figures 1 and 2) with  
impulse repetition rate (duty factor) of 0.05% or less  
.
.
.
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -55 °C to +150 °C  
Thermal resistance: 0.2 °C/W junction to case or 50 °C/W junction to ambient when mounted on FR4 PC  
board with recommended mounting pad (see page 2)  
.
Steady-State Power dissipation: 50 watts at TC = 100 °C with good heat sink, or 2.5 watts at TA = 25 °C  
if mounted on FR4 PC board as described for thermal resistance  
.
.
Forward Surge Voltage: 3.5 V maximum @ 500 Amps 8.3 ms half-sine wave (unidirectional devices only)  
Solder temperatures: 260 °C for 10 s (maximum)  
RF01004 Rev C, November 2010  
High Reliability Product Group  
Page 1 of 4  
1234

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 		Trans Voltage Suppressor Diode, 15000W, 90V V(RWM), Unidirectional, 1 Element, Silicon, RO
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 		Trans Voltage Suppressor Diode, 15000W, 90V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MPLAD15KP90CAE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 15000W, 90V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MPLAD30KP100A MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, P
MPLAD30KP100A/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, P
MPLAD30KP100AE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, R
MPLAD30KP100AE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, R

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