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MPLAD130KP275CVE3 PDF预览

MPLAD130KP275CVE3

更新时间： 2024-11-26 19:24:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
3页 239K
描述
Trans Voltage Suppressor Diode, 1300001W, 275V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-1

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中文翻译

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MPLAD130KP275CVE3 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：PLASTIC PACKAGE-1针数：1
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.75
其他特性：HIGH RELIABILITY最小击穿电压：300 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：R-PSSO-G1
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：1300001 W元件数量：1
端子数量：1封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大功率耗散：250 W最大重复峰值反向电压：275 V
表面贴装：YES技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MPLAD130KP275CVE3 数据手册

 浏览型号MPLAD130KP275CVE3的Datasheet PDF文件第2页浏览型号MPLAD130KP275CVE3的Datasheet PDF文件第3页 
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
- Bidirectional (CA) construction  
SURFACE MOUNT 130 kW  
Transient Voltage Suppressor  
- 275 V standoff voltages (VWM  
- Fast response  
)
LEVELS  
M, MA, MX, MXL  
DEVICES MPLAD130KP275CA and MPLAD130KP275CV, e3  
FEATURES  
.
.
.
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Low profile surface mount  
Low package inductance  
Available as either low clamp with “CV” suffix or normal clamping features with “CA” suffix  
Optional up screening available by replacing the M prefix with MA, MX or MXL. These  
prefixes specify various screening and conformance inspection options based on MIL-PRF-19500.  
Refer to MicroNote 129 for more details on the screening options.  
.
.
.
.
Suppresses transients up to 130 kW1 @ 6.4/69 µs  
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS compliant devices available by adding an “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
MAXIMUM RATINGS  
.
Peak Pulse Power dissipation at 25 °C: 130,0001 watts @ 6.4/69 µs (also see Figure 1) with  
impulse repetition rate (duty factor) of 0.05% or less  
.
.
.
tclamping (0 volts to VBR min.): < 5 ns (theoretical)  
Operating and Storage temperature: -55 °C to +150 °C  
Thermal resistance: 0.5 °C/W junction to case or 50 °C/W junction to ambient when mounted  
on FR4 PC board with recommended mounting pad (see page 2) and 1oz Cu  
.
Steady-State Power dissipation: 250 watts at TC = 25 °C with good heat sink, or 2.5 watts at  
TA = 25 °C if mounted on FR4 PC board as described for thermal resistance  
.
.
Temperature Coefficient of voltage: 0.1 %/°C  
Solder temperatures: 260 °C for 10 s (maximum)  
MECHANICAL AND PACKAGING  
.
.
Void-free transfer molded thermosetting epoxy body meeting UL94V-0  
Tin-Lead (90 % Sn, 10 % Pb) or RoHS (100 % Sn) compliant annealed matte-tin plating  
readily solderable per MIL-STD-750, method 2026  
.
.
.
.
.
Body marked with part number  
No Cathode band for Bi-directional devices  
Available in custom tape-and-reel or bulk packaging  
TAPE-AND-REEL Standard per EIA-481-B (add “TR” suffix to part number)  
Weight: 2.2 grams (approximately)  
RF01020 Rev A, November 2010  
High Reliability Product Group  
Page 1 of 3  
123

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