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MP501W-B PDF预览

MP501W-B

更新时间: 2024-01-06 20:01:24
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 79K
描述
Rectifier Diode,

MP501W-B 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.69Is Samacsys:N
其他特性:UL RECOGNIZED最小击穿电压:100 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:S-PUFM-W4
湿度敏感等级:1最大非重复峰值正向电流:450 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:50 A
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:100 V表面贴装:NO
端子形式:WIRE端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MP501W-B 数据手册

 浏览型号MP501W-B的Datasheet PDF文件第2页 
MP5005  
THRU  
M C C  
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21201 Itasca Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
MP5010  
Features  
50 Amp Single Phase  
Bridge Rectifier  
·
·
·
·
Mounting Hole For #8 Screw  
Plastic Case With Metal Bottom  
Any Mounting Position  
50 to 1000 Volts  
Surge Rating Of 400 Amps  
MP-50  
Maximum Ratings  
·
·
Operating Temperature: -50°C to +150°C  
Storage Temperature: -50°C to +150°C  
B
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
C
MP5005  
MP501  
MP502  
MP504  
MP506  
MP508  
MP5010  
MP5005  
MP501  
MP502  
MP504  
MP506  
MP508  
MP5010  
35V  
70V  
100V  
200V  
400V  
600V  
800V  
1000v  
100V  
E
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
G
+
AC  
1000v  
D
A
H
-
AC  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
50.0A  
TJ = 55°C  
J
Peak Forward Surge  
Current  
IFSM  
400A  
8.3ms, half sine  
A
Maximum Forward  
Voltage Drop Per  
Element  
VF  
1.2V  
IFM = 25A per  
element;  
DIMENSIONS  
MM  
TJ = 25°C*  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
INCHES  
MIN  
---  
DIM  
A
B
C
D
E
G
H
MAX  
1.140  
.452  
.480  
.732  
.677  
---  
MIN  
---  
---  
10.80  
17.54  
16.20  
4.77  
16.10  
13.80  
MAX  
29.00  
11.50  
12.20  
18.6  
NOTE  
IR  
10mA  
1.0mA  
TJ = 25°C  
TJ = 100°C  
---  
.425  
.693  
.637  
.188  
.633  
.543  
17.20  
---  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
Æ
.673  
.582  
17.10  
14.80  
J
www.mccsemi.com  

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