Datasheet > MP4T324333

MP4T324333

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
MPLUSE		晶体晶体管
页数	文件大小	规格书
7页	84K
描述
Bipolar High fT Low Voltage NPN Silicon Transistors

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MP4T324333 数据手册

Bipolar High f Low Voltage

NPN Silicon Transistors

MP4T3243 Series

V4.00

Features

Case Style

Designed for 3-5 Volt Operation

Useable to 6 GHz in Oscillators

Useable for Low Noise, Low Voltage Driver Amplifiers

Through 3 GHz

Useful for Class C Amplifiers

Available as Chips and in Hermetic and Surface

Mount Packages

Can be Screened to JANTX, JANTXV Equivalent Levels

(ceramic pacakges)

Tape and Reel Packaging Available for packaged

devices.

SOT-23

Description

The MP4T3243 series of high f_Tlow voltage NPN medium

power silicon bipolar transistors is designed for usage in

battery operated systems with 3-5 volt collector bias. They

are useful as low phase noise oscillator transistors through 6

GHz and as moderate power driver amplifiers through 3

GHz.

These transistors are available as chips for hybrid oscillators

or in ceramic packages for military or commercial usage.

Both the chips and hermetic packages can be screened to

JANTX equivalent levels.

Chip

These transistors use high temperature gold, platinum,

titanium metalization with silicon dioxide and silicon nitride

passivation. The chip is emitter ballasted with polysilicon

resistors to prevent current concentration at high current

operation.

Micro-X

Specification Subject to Change Without Notice

M-Pulse

Microwave____________________________________________________________________________________

576 Charcot Avemue, San Jose, California 95131

Tel (408) 432-1480

Fax (408)) 432-3440

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