Datasheet > MP4T64535

MP4T64535

更新时间： 2024-01-12 01:41:05

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MPLUSE		晶体晶体管微波
页数	文件大小	规格书
8页	103K
描述
Silicon Bipolar High fT Low Noise Microwave Transistors

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MP4T64535 数据手册

Silicon Bipolar High f_TLow Noise

Microwave Transistors

MP4T645

Case Styles

Features

· f_Tto 9 GHz

· Low Noise Figure

· High Associated Gain

· Hermetic and Surface Mount Packages Available

· Can be Screened to JANTX, JANTXV Equivalent Levels

· Industry Standard

Description

SOT-23

SOT-143

The MP4T645 family of high gain-bandwidth, small

signal silicon bipolar transistors is well suited for use in

amplifiers to approximately 4 GHz, and in oscillators to

approximately 10 GHz. These industry standard transis-

tors freature low noise figure at high collector current,

which produces very good associated gain and wide

dynamic range. The MP4T645 series transistors are

available

hermetic

microstrip

package

(MP4T64535), in the plastic SOT-23 package

(MP4T64533), in chip form (MP4T64500), and in the

SOT-143 package (MP4T64539). The MP4T645 series

is available in other plastic and hermetic packages as

well. The chip and hermetically packaged transistors

can be screened to a JANTXV equivalent level.

Chip

Applications

The MP4T645 family of bipolar NPN transistors can be

used for low noise, high associated gain. large dynamic

range amplifiers up to approximately 4 GHz. These

transistors can also be used as preamplifier or driver

stages in the same frequency range.

The MP4T645 family of bipolar NPN transistors can also

be used for oscillators or VCOs up to approximately 10

GHz.

The passivation consists of silicon dioxide,

commonly known as thermal oxide, and silicon nitride to

produce very low 1/f noise in both amplifiers and

oscillators.

Micro-X

Specification Subject to Change Without Notice

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