Datasheet > MP4T631000

MP4T631000

更新时间： 2025-04-15 10:49:55

品牌	Logo	应用领域
MPLUSE		晶体晶体管
页数	文件大小	规格书
8页	182K
描述
3 Volt, Low Noise High fT Silicon Transistor

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MP4T631000 数据手册

3 Volt, Low Noise

High f Silicon Transistor

MP4T6310 Series

Features

SOT-23

SOT-143

Chip

•

High Performance at V

= 3V

•

Low Noise Figure at Small Currents (0.3-2 mA)

High Gain (14 dB) at 1mA Collector Current

High f (14 GHz)

•

Available on Tape and Reel

Description

The MP4T6310 series of low current, high f silicon NPN

bipolar transistors provides low noise figure at a bias of 3

volts and small collector current. These inexpensive surface

mount NPN transistors are well suited for usage in protable

battery operated wireless systems from 500 MHz through 2.5

GHz where low noise figure at small current is important.

The MP4T6310 transistors series has high f and low noise

when operated with 0.3 to 2.0 milliamperes current, and 3

volt bias. The associated gain is approximately 14 dB at 1

GHz with 1 mA collector current. The MP4T6310 also has

low phase noise while operating in a low power 3-5 volt

battery operated VCO in the frequency range of 0.5 to 3

GHz.

The MP4T6310 transistor is designed for wireless

communication systems from VHF through L-band where

good noise figure and high gain at 3 volt bias and low DC

current are key system requirements. Suggested uses

include, 900 MHz portable phones, pagers, PCN subscriber

phones and 2.4 GHz cordless and cellular hand held

receivers.

The MP4T6310 family of transistors is available in chip

(MP4T631000),

SOT-23

(MP4T631033),

SOT-143

(MP4T631039), and in Micro-X (MP4T631035) packages.

Surface mount packages are available on tape and reel.

Specification Subject to Change Without Notice

M-Pulse Microwave____________________________________________________________________________________

576 Charcot Avemue, San Jose, California 95131

Tel (408) 432-1480

Fax (408)) 432-3440

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