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MOCD206MV

更新时间： 2024-11-25 13:11:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体光电晶体管光电晶体管输出元件
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7页 101K
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中文翻译

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MOCD206MV 数据手册

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DUAL CHANNEL PHOTOTRANSISTOR  
SMALL OUTLINE SURFACE MOUNT  
OPTOCOUPLERS  
MOCD206M  
MOCD207M  
MOCD208M  
DESCRIPTION  
The MOCD206M/MOCD207M/MOCD208M consist of two silicon phototransistors optically coupled to  
two GaAs infrared LEDs. These devices are constructed in a small outline surface mount package  
which conforms to the standard SOIC-8 footprint.  
FEATURES  
• Dual Channel Optocoupler  
• Convenient Plastic SOIC-8 Surface Mountable Package Style  
• Two channels in one compact surface mount package  
• Closely Matched Current Transfer Ratios to Minimize Unit-to-Unit Variation  
• Minimum V  
of 70 Volts Guaranteed  
(BR)CEO  
ANODE 1  
1
8
COLLECTOR 1  
• Standard SOIC-8 Footprint, with 0.050” Lead Spacing  
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering  
• High Input-Output Isolation of 2500 Vac (rms) Guaranteed  
• Meets U.L. Regulatory Requirements, File #E90700, Volume 2  
CATHODE 1  
ANODE 2  
2
3
7
6
5
EMITTER 1  
COLLECTOR 2  
EMITTER 2  
APPLICATIONS  
• Feedback control circuits  
CATHODE 2  
4
• Interfacing and coupling systems of different potentials and impedances  
• General purpose switching circuits  
• Monitor and detection circuits  
ABSOLUTE MAXIMUM RATINGS (T = 25°C Unless otherwise specified)  
A
Rating  
Symbol  
Value  
Unit  
EMITTER  
Forward Current - Continuous  
Forward Current - Peak (PW = 100 µs, 120 pps)  
Reverse Voltage  
I
60  
1.0  
6.0  
90  
mA  
A
F
I (pk)  
F
V
V
R
LED Power Dissipation @ T = 25°C  
mW  
mW/°C  
A
P
D
Derate above 25°C  
DETECTOR  
0.8  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Collector Voltage  
Collector Current-Continuous  
V
70  
70  
V
V
CEO  
CBO  
ECO  
V
V
7.0  
V
I
150  
150  
1.76  
mA  
mW  
mW/°C  
C
Detector Power Dissipation @ T = 25°C  
A
P
D
Derate above 25°C  
TOTAL DEVICE  
(1, 2)  
Input-Output Isolation Voltage  
V
2500  
Vac(rms)  
ISO  
(f = 60 Hz, 1 min. Duration)  
Total Device Power Dissipation @ T = 25°C  
250  
mW  
mW/°C  
°C  
A
P
D
Derate above 25°C  
2.94  
Ambient Operating Temperature Range  
Storage Temperature Range  
T
-40 to +100  
-40 to +125  
A
T
°C  
stg  
Lead Soldering Temperature  
T
260  
°C  
L
(1/16” from case, 10 sec. duration)  
© 2005 Fairchild Semiconductor Corporation  
Page 1 of 7  
7/11/05  
1234567

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