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MOC8112-X007 PDF预览

MOC8112-X007

更新时间: 2024-02-07 10:07:55
品牌 Logo 应用领域
威世 - VISHAY 晶体光电晶体管光电晶体管
页数 文件大小 规格书
5页 107K
描述
Optocoupler, Phototransistor Output, No Base Connection

MOC8112-X007 数据手册

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MOC8111/MOC8112  
Vishay Semiconductors  
Optocoupler, Phototransistor Output,  
No Base Connection  
FEATURES  
• No base terminal connection for improved  
common mode interface immunity  
1
6
A
C
B
C
E
5
4
2
3
• Long term stability  
• Industry standard dual in line package  
• Lead (Pb)-free component  
NC  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
i179009  
DESCRIPTION  
AGENCY APPROVALS  
The MOC8111/ MOC8112 is an optocoupler consisting of a  
gallium arsenide infrared emitting diode optically coupled to  
a silicon planar phototransistor detector in a plastic plug-in  
DIP 6 pin package.  
The coupling device is suitable for signal transmission  
between two electrically separated circuits. The potential  
difference between the circuits to be coupled should not  
exceed the maximum permissible reference voltages.  
In contrast to the IL1, the base terminal is not connected,  
resulting in substantially improved common mode  
interference immunity.  
• UL1577, file no. E52744 system code H or J, double  
protection  
• BSI IEC 60950; IEC 60065  
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending  
available with option 1  
• CSA 93751  
ORDER INFORMATION  
PART  
REMARKS  
MOC8111  
CTR > 20 %, DIP-6  
MOC8112  
CTR > 50 %, DIP-6  
MOC8111-X006  
MOC8111-X007  
MOC8112-X006  
MOC8112-X007  
MOC8112-X009  
CTR > 20 %, DIP-6 400 mil (option 6)  
CTR > 20 %, SMD-6 (option 7)  
CTR > 50 %, DIP-6 400 mil (option 6)  
CTR > 50 %, SMD-6 (option 7)  
CTR > 50 %, SMD-6 (option 9)  
Note  
For additional information on the available options refer to option information.  
ABSOLUTE MAXIMUM RATINGS (1)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
INPUT  
DC forward current  
Reverse voltage  
IF  
60  
6.0  
2.5  
100  
mA  
V
VR  
Surge forward current  
Total power dissipation  
OUTPUT  
t 10 µs  
IFSM  
Pdiss  
A
mW  
Emitter collector breakdown voltage  
BVECO  
IC  
30  
50  
V
mA  
mA  
mW  
Collector current  
t 10 µs  
IC  
150  
150  
Total power dissipation  
Pdiss  
Document Number: 83661  
Rev. 1.5, 11-Jan-08  
For technical questions, contact: optocoupler.answers@vishay.com  
www.vishay.com  
1

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