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MMUN2132LT1 PDF预览

MMUN2132LT1

更新时间: 2024-02-15 15:43:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
12页 122K
描述
PNP SILICON BIAS RESISTOR TRANSISTOR

MMUN2132LT1 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:0.93
其他特性:BUILT-IN BIAS RESISTOR RATIO 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):15JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MMUN2132LT1 数据手册

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MMUN2111LT1 Series  
Preferred Devices  
Bias Resistor Transistors  
PNP Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base-emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the SOT-23  
package which is designed for low power surface mount applications.  
http://onsemi.com  
PIN 3  
COLLECTOR  
(OUTPUT)  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
The SOT-23 package can be soldered using wave or reflow. The  
modified gull-winged leads absorb thermal stress during soldering  
eliminating the possibility of damage to the die.  
3
1
Available in 8 mm embossed tape and reel. Use the Device Number  
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the  
Device Number to order the 13 inch/10,000 unit reel.  
2
SOT–23  
CASE 318  
STYLE 6  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
MARKING DIAGRAM  
V
CBO  
CEO  
V
50  
Vdc  
I
C
100  
mAdc  
A6x  
M
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
A6x  
x
Page 2)  
M
= Device Marking  
= A – L (See  
Total Device Dissipation  
P
D
246 (Note 1.)  
400 (Note 2.)  
1.5 (Note 1.)  
2.0 (Note 2.)  
mW  
T
= 25°C  
A
Derate above 25°C  
°C/W  
°C/W  
°C/W  
°C  
= Date Code  
Thermal Resistance –  
Junction-to-Ambient  
R
508 (Note 1.)  
311 (Note 2.)  
θJA  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
Thermal Resistance –  
Junction-to-Lead  
R
174 (Note 1.)  
208 (Note 2.)  
θJL  
Junction and Storage  
Temperature Range  
T , T  
J stg  
–55 to +150  
Preferred devices are recommended choices for future use  
and best overall value.  
1. FR–4 @ Minimum Pad  
2. FR–4 @ 1.0 x 1.0 inch Pad  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
November, 2001 – Rev. 2  
MMUN2111LT1/D  

MMUN2132LT1 替代型号

型号 品牌 替代类型 描述 数据表
MMUN2132LT1G ONSEMI

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