Datasheet > MMUB65R115RURH

MMUB65R115RURH

更新时间： 2024-12-01 17:15:23

品牌	Logo	应用领域
美格纳 - MGCHIP		光电二极管
页数	文件大小	规格书
10页	809K
描述
PDFN88

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MMUB65R115RURH 数据手册

MMUB65R115R Datasheet

MMUB65R115RU(P)RH

650V 0.115Ω N-channel MOSFET

 Description

MMUB65R115RU(P) is power MOSFET using Magnachip’s advanced super junction technology

that can realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of Low EMI and

low switching loss as well as excellent ESD capability to designers.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_j,max

R_DS(on),max

V_GS(th),typ

I_D

Value

Unit

700

0.115

3.0

Ω

Q_g,typ

64.0

 Features

 Low Power Loss by High Speed Switching and Low On-Resistance

 Excellent ESD robustness

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Applications

 Premium OLED TV

 PFC Power Supply Stages

 Switching Applications

 Adapter

 Ordering Information

Temp.

Range

Order Code

Marking

Package

Packing

RoHS Status

MMUB65R115RURH

MMUB65R115RPRH¹⁾

65R115R

-55 ~ 150 ^oC

PDFN88

Reel

Compliant

1) MMUB65R115RPRH : Pure Pb free solder wire

Oct. 2023. Revision 1.1

Magnachip Semiconductor Ltd.

12 3 4 5 6 7...10

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