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MMSZ5254ET1 PDF预览

MMSZ5254ET1

更新时间: 2024-11-29 11:01:39
品牌 Logo 应用领域
安森美 - ONSEMI 二极管齐纳二极管稳压器
页数 文件大小 规格书
6页 79K
描述
225 W,27 V 齐纳二极管稳压器

MMSZ5254ET1 数据手册

 浏览型号MMSZ5254ET1的Datasheet PDF文件第2页浏览型号MMSZ5254ET1的Datasheet PDF文件第3页浏览型号MMSZ5254ET1的Datasheet PDF文件第4页浏览型号MMSZ5254ET1的Datasheet PDF文件第5页浏览型号MMSZ5254ET1的Datasheet PDF文件第6页 
MMSZ5221ET1 Series  
Preferred Device  
Zener Voltage Regulators  
500 mW SOD−123 Surface Mount  
Three complete series of Zener diodes are offered in the convenient,  
surface mount plastic SOD−123 package. These devices provide a  
convenient alternative to the leadless 34−package style.  
http://onsemi.com  
Features  
1
2
Pb−Free Packages are Available  
Cathode  
Anode  
500 mW Rating on FR−4 or FR−5 Board  
Wide Zener Reverse Voltage Range − 2.4 V to 110 V  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
General Purpose, Medium Current  
SOD−123  
CASE 425  
STYLE 1  
2
1
ESD Rating of Class 3 (>16 kV) per Human Body Model  
Peak Power − 225 W (8 x 20 ms)  
MARKING DIAGRAM  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
xxx M  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
xxx = Specific Device Code  
M
= Date Code  
MAXIMUM RATINGS  
ORDERING INFORMATION  
Rating  
Symbol  
Max  
Unit  
Device**  
Package  
Shipping  
Peak Power Dissipation @ 20 ms (Note 1)  
P
pk  
225  
W
MMSZ52xxET1  
SOD−123  
3000/Tape & Reel  
3000/Tape & Reel  
@ T 25°C  
L
Total Power Dissipation on FR−5 Board,  
(Note 2) @ T = 75°C  
Derated above 75°C  
P
D
MMSZ52xxET1G SOD−123  
(Pb−Free)  
500  
6.7  
mW  
mW/°C  
L
MMSZ52xxET3  
SOD−123 10,000/Tape & Reel  
Thermal Resistance, (Note 3)  
Junction−to−Ambient  
R
340  
150  
°C/W  
°C/W  
°C  
q
JA  
MMSZ52xxET3G SOD−123 10,000/Tape & Reel  
(Pb−Free)  
Thermal Resistance, (Note 3)  
Junction−to−Lead  
R
q
JL  
**The “T1” suffix refers to an 8 mm, 7 inch reel.  
The “T3” suffix refers to an 8 mm, 13 inch reel.  
Junction and Storage Temperature Range T , T  
−55 to  
+150  
J
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
1. Nonrepetitive current pulse per Figure 11.  
2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.  
3. Thermal Resistance measurement obtained via infrared Scan Method.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 2 of  
this data sheet.  
Devices listed in bold, italic are ON Semiconductor  
Preferred devices. Preferred devices are recommended  
choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
February, 2005 − Rev. 4  
MMSZ5221ET1/D  
 

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