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MMSZ5234ET1G PDF预览

MMSZ5234ET1G

更新时间: 2024-11-01 22:15:59
品牌 Logo 应用领域
安森美 - ONSEMI 稳压器二极管测试光电二极管
页数 文件大小 规格书
6页 79K
描述
Zener Voltage Regulators

MMSZ5234ET1G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.18
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:7 ΩJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:6.2 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
最大电压容差:5%工作测试电流:20 mA
Base Number Matches:1

MMSZ5234ET1G 数据手册

 浏览型号MMSZ5234ET1G的Datasheet PDF文件第2页浏览型号MMSZ5234ET1G的Datasheet PDF文件第3页浏览型号MMSZ5234ET1G的Datasheet PDF文件第4页浏览型号MMSZ5234ET1G的Datasheet PDF文件第5页浏览型号MMSZ5234ET1G的Datasheet PDF文件第6页 
MMSZ5221ET1 Series  
Preferred Device  
Zener Voltage Regulators  
500 mW SOD−123 Surface Mount  
Three complete series of Zener diodes are offered in the convenient,  
surface mount plastic SOD−123 package. These devices provide a  
convenient alternative to the leadless 34−package style.  
http://onsemi.com  
Features  
1
2
Pb−Free Packages are Available  
Cathode  
Anode  
500 mW Rating on FR−4 or FR−5 Board  
Wide Zener Reverse Voltage Range − 2.4 V to 110 V  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
General Purpose, Medium Current  
SOD−123  
CASE 425  
STYLE 1  
2
1
ESD Rating of Class 3 (>16 kV) per Human Body Model  
Peak Power − 225 W (8 x 20 ms)  
MARKING DIAGRAM  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
xxx M  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
xxx = Specific Device Code  
M
= Date Code  
MAXIMUM RATINGS  
ORDERING INFORMATION  
Rating  
Symbol  
Max  
Unit  
Device**  
Package  
Shipping  
Peak Power Dissipation @ 20 ms (Note 1)  
P
pk  
225  
W
MMSZ52xxET1  
SOD−123  
3000/Tape & Reel  
3000/Tape & Reel  
@ T 25°C  
L
Total Power Dissipation on FR−5 Board,  
(Note 2) @ T = 75°C  
Derated above 75°C  
P
D
MMSZ52xxET1G SOD−123  
(Pb−Free)  
500  
6.7  
mW  
mW/°C  
L
MMSZ52xxET3  
SOD−123 10,000/Tape & Reel  
Thermal Resistance, (Note 3)  
Junction−to−Ambient  
R
340  
150  
°C/W  
°C/W  
°C  
q
JA  
MMSZ52xxET3G SOD−123 10,000/Tape & Reel  
(Pb−Free)  
Thermal Resistance, (Note 3)  
Junction−to−Lead  
R
q
JL  
**The “T1” suffix refers to an 8 mm, 7 inch reel.  
The “T3” suffix refers to an 8 mm, 13 inch reel.  
Junction and Storage Temperature Range T , T  
−55 to  
+150  
J
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
1. Nonrepetitive current pulse per Figure 11.  
2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.  
3. Thermal Resistance measurement obtained via infrared Scan Method.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 2 of  
this data sheet.  
Devices listed in bold, italic are ON Semiconductor  
Preferred devices. Preferred devices are recommended  
choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
February, 2005 − Rev. 4  
MMSZ5221ET1/D  
 

MMSZ5234ET1G 替代型号

型号 品牌 替代类型 描述 数据表
MMSZ5234ET1 ONSEMI

完全替代

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MMSZ5234 MCC

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CMHZ5234B CENTRAL

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