Datasheet > MMST5401

MMST5401

更新时间： 2024-04-09 18:58:48

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	293K
描述
150V,0.6A,General Purpose PNP Bipolar Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMST5401 数据手册

Product Specification

PNP General Purpose Transistor

MMST5401

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Test conditions

MIN. MAX. UNIT

V_(BR)CBO

Collector-base breakdown voltage

I_C=-100μA,I_E=0

-160

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector-emitter breakdown voltage I_C=-1mA,I_B=0

-150

-5

Emitter-base breakdown voltage

collector cut-off current

I_E=-10μA,I_C=0

I_E=0;V_CB= -120V

I_C=0; V_EB= -3V

-50

I_EBO

emitter cut-off current

V_CE=-5V; I_C=-1mA

V_CE=-5V;I_C=-10mA

V_CE=-5V;I_C=-50 mA

I_C=-50 mA; I_B=-5mA

I_C=-10mA; I_B=-1mA

h_FE

DC current gain

240

-0.5

-0.2

V_CE(sat)

V_BE(sat)

f_T

collector-emitter saturation voltage

base-emitter saturation voltage

transition frequency

I_C=-50mA;I_B=-5mA

I_C=-10mA; I_B=-1mA

I_C=-10mA; V_CE= -10V,

f=100MHz

-1

100

300

MHz

I_C=-200mA,V_CE=-5.0V,

f=100MHz

Noise figure

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

STM0359A: December 2019

www.gmesemi.com

123 4

中文翻译

下载PDF

与MMST5401相关器件

型号	品牌	描述	获取价格	数据表
MMST5401_1	DIODES	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR	获取价格
MMST5401_11	MCC	PNP Small Signal Transistors	获取价格
MMST5401_2	DIODES	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR	获取价格
MMST5401-13	DIODES	Small Signal Bipolar Transistor, 0.2A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA	获取价格
MMST5401-7	DIODES	Small Signal Bipolar Transistor, 0.2A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA	获取价格
MMST5401-7-F	DIODES	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR	获取价格