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MMST2907AT146 PDF预览

MMST2907AT146

更新时间: 2024-02-01 13:55:32
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管晶体管
页数 文件大小 规格书
5页 107K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, SMT3, 3 PIN

MMST2907AT146 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SC-59
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:6.89
最大集电极电流 (IC):0.6 A基于收集器的最大容量:7 pF
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-G3
JESD-609代码:e1湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):100 ns
最大开启时间(吨):50 nsVCEsat-Max:0.6 V
Base Number Matches:1

MMST2907AT146 数据手册

 浏览型号MMST2907AT146的Datasheet PDF文件第2页浏览型号MMST2907AT146的Datasheet PDF文件第3页浏览型号MMST2907AT146的Datasheet PDF文件第4页浏览型号MMST2907AT146的Datasheet PDF文件第5页 
UMT2907A / SST2907A / MMST2907A  
Transistors  
PNP Medium Power Transistor  
(Switching)  
UMT2907A / SST2907A / MMST2907A  
zFeatures  
1) BVCEO< -60V (IC=-10mA)  
2) Complements the UMT2222A / SST2222A /  
MMST2222A.  
zDimensions (Unit : mm)  
UMT2907A  
zPackage, marking and packaging specifications  
(1) Emitter  
(2) Base  
(3) Collector  
ROHM : UMT3  
EIAJ : SC-70  
Part No.  
Packaging type  
Marking  
UMT2907A SST2907A MMST2907A  
UMT3  
R2F  
SST3  
R2F  
SMT3  
R2F  
Code  
T106  
T116  
T146  
SST2907A  
Basic ordering unit  
(pieces)  
3000  
3000  
3000  
zAbsolute maximum ratings (Ta=25°C)  
(1) Emitter  
(2) Base  
(3) Collector  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Limits  
60  
60  
5  
Unit  
V
VCBO  
VCEO  
VEBO  
ROHM : SST3  
MMST2907A  
V
V
I
C
0.6  
A
UMT2907A,  
SST2907A,  
0.2  
W
Collector power  
dissipation  
PC  
MMST2907A  
SST2907A  
0.35  
150  
W
°C  
°C  
Junction temperature  
Storage temperature  
Tj  
Tstg  
55 to +150  
Mounted on a 7x5x0.6mm ceramic substrate.  
(1) Emitter  
(2) Base  
(3) Collector  
ROHM : SMT3  
EIAJ : SC-59  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
BVCBO  
BVCEO  
BVEBO  
60  
60  
5  
V
V
V
I
I
I
C
= 10µA  
= 10mA  
C
E
= 10µA  
CB= 50V  
CB= 30V  
EB= 3V  
I
CBO  
CES  
EBO  
100  
100  
100  
0.4  
1.6  
1.3  
2.6  
V
V
V
Collector cutoff current  
nA  
nA  
V
I
Emitter cutoff current  
I
I
I
I
I
C/I  
C/I  
C/I  
C
/I  
B
B
B
B
= 150mA/ 15mA  
= 500mA/ 50mA  
= 150mA/ 15mA  
= 500mA/ 50mA  
Collector-emitter saturation voltage  
V
CE(sat)  
BE(sat)  
Base-emitter saturation voltage  
DC current transfer ratio  
V
V
75  
100  
100  
100  
50  
200  
V
V
V
V
V
CE= 10V, I  
CE= 10V, I  
CE= 10V, I  
CE= 10V, I  
CE= 10V, I  
CE= 20V, IE=50mA, f=100MHz  
CB= 10V, f=100kHz  
EB= 2V, f=100kHz  
CC= 30V, VBE(OFF)= 1.5V, I  
CC= 30V, VBE(OFF)= 1.5V, I  
CC= 30V, VBE(OFF)= 1.5V, I  
CC= 30V, I  
CC= 30V , I  
CC= 30V, I  
C
C
C
C
C
= 0.1mA  
= 1mA  
= 10mA  
= 150mA  
= 500mA  
hFE  
300  
8
Transition frequency  
Collector output capacitance  
Emitter input capacitance  
Turn-on time  
f
T
MHz  
pF  
pF  
ns  
V
V
V
V
V
V
V
V
V
Cob  
Cib  
ton  
td  
30  
50  
10  
40  
100  
80  
30  
C
C
C
= 150mA, IB1= 15mA  
= 150mA, IB1= 15mA  
=150mA, IB1= 15mA  
Delay time  
ns  
Rise time  
tr  
ns  
Turn-off time  
toff  
tstg  
tf  
ns  
C= 150mA, IB1=IB2= 15mA  
Storage time  
ns  
C
= 150mA, IB1=IB2= 15mA  
Fall time  
ns  
C= 150mA, IB1=IB2= 15mA  
Rev.B  
1/4  

MMST2907AT146 替代型号

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