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MMST3904 PDF预览

MMST3904

更新时间: 2024-02-22 12:33:09
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管光电二极管
页数 文件大小 规格书
1页 131K
描述
TRANSISTOR (NPN)

MMST3904 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.7
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大开启时间(吨):70 ns
Base Number Matches:1

MMST3904 数据手册

  
RoHS  
MMST3904  
MMST3904  
FEATURES  
TRANSISTOR (NPN)  
SOT-323  
1. BASE  
Power dissipation  
1. 25¡ À0. 05  
2. EMITTER  
PCM:  
0.2  
W (Tamb=25)  
3. COLLECTOR  
2. 30¡ À0. 05  
Collector current BASE  
ICM:  
0.2  
60  
A
Collector-base voltage  
V(BR)CBO  
:
V
Operating and storage junction temperature range  
Unit: mm  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic= 10µA, IE=0  
Ic= 1 mA, IB=0  
MIN  
60  
40  
5
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
IE= 10µA, IC=0  
VCB= 60V, IE=0  
0.1  
0.1  
0.1  
300  
µA  
µA  
µA  
ICEO  
VCE= 40V, IB=0  
Collector cut-off current  
IEBO  
VEB= 5V, IC=0  
Emitter cut-off current  
hFE(1)  
VCE= 1V, IC= 10mA  
VCE= 1V, IC= 50mA  
IC=50 mA, IB= 5mA  
IC= 50 mA, IB= 5mA  
100  
60  
DC current gain  
hFE(2)  
VCE(sat)  
VBE(sat)  
0.3  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
0.95  
VCE= 20V, IC= 10mA  
f=100MHz  
250  
MHz  
pF  
Transition frequency  
Output Capacitance  
fT  
VCB=5V, IE= 0  
f=1MHz  
4
Cob  
35  
35  
nS  
nS  
Delay time  
Rise time  
td  
tr  
VCC=3V, VBE=0.5V  
IC=10mA , IB1=1mA  
WEJ ELECTRONIC CO.,LTD  
200  
nS  
Storage time  
Fall time  
tS  
VCC=3V, IC=10mA  
50  
nS  
tf  
IB1= IB2= 1mA  
Marking  
K2N  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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