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MMST3904 PDF预览

MMST3904

更新时间: 2023-12-06 20:03:15
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 730K
描述
SOT-323

MMST3904 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-323 Plastic-Encapsulate Transistors  
MMST3904 TRANSISTOR (NPN)  
SOT323  
FEATURES  
Complementary to MMST3906  
MARKING:K2N  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Parameter  
Value  
Unit  
V
Symbol  
VCBO  
VCEO  
VEBO  
IC  
1. BASE  
Collector-Base Voltage  
60  
2. EMITTER  
3. COLLECTOR  
Collector-Emitter Voltage  
40  
V
Emitter-Base Voltage  
5
V
Collector Current  
200  
200  
625  
mA  
mW  
/W  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
PC  
RΘJA  
Operation Junction and  
Storage Temperature Range  
TJ,Tstg  
-55+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
Min  
60  
40  
5
Typ  
Max  
Unit  
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
*
IC=10µA, IE=0  
IC=1mA, IB=0  
IE=10µA, IC=0  
VCB=60V, IE=0  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
*
*
V
V
ICBO  
*
60  
nA  
nA  
Collector cut-off current  
Collector cut-off current  
ICEX  
VCE=30V, VBE(off)=3V  
50  
VCE=1V, IC=100µA  
VCE=1V, IC=1mA  
40  
70  
hFE*  
DC current gain  
VCE=1V, IC=10mA  
100  
60  
300  
VCE=1V, IC=50mA  
IC=10mA, IB=1mA  
0.25  
0.3  
V
V
VCE(sat)  
*
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
IC=50mA, IB=5mA  
IC=10mA, IB=1mA  
0.85  
0.95  
V
VBE(sat)  
*
IC=50mA, IB=5mA  
V
fT  
Cob  
Cib  
td  
VCE=20V,IC=10mA , f=100MHz  
VCB=5V, IE=0, f=1MHz  
VEB=0.5V, IE=0, f=1MHz  
VCC=3V, VBE(off)=0.5V IC=10mA,  
IB1=1mA  
300  
MHz  
pF  
pF  
ns  
Transition frequency  
Collector output capacitance  
Collector output capacitance  
Delay time  
4
8
35  
tr  
35  
ns  
ns  
Rise time  
ts  
225  
Storage time  
VCC=3V, IC=10mA, IB1= IB2=1mA  
tf  
75  
ns  
Fall time  
*Pulse test: pulse width ≤300μs,duty cycle≤ 2.0%.  
www.jscj-elec.com  
1
Rev. - 2.0  

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