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MMBZ5237ELT1T3G PDF预览

MMBZ5237ELT1T3G

更新时间： 2024-11-23 12:18:51
品牌 Logo 应用领域
安森美 - ONSEMI 稳压器
页数 文件大小 规格书
6页 154K
描述
Zener Voltage Regulators

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MMBZ5237ELT1T3G 数据手册

 浏览型号MMBZ5237ELT1T3G的Datasheet PDF文件第2页浏览型号MMBZ5237ELT1T3G的Datasheet PDF文件第3页浏览型号MMBZ5237ELT1T3G的Datasheet PDF文件第4页浏览型号MMBZ5237ELT1T3G的Datasheet PDF文件第5页浏览型号MMBZ5237ELT1T3G的Datasheet PDF文件第6页 
MMBZ52xxELT1G Series,  
SZMMBZ52xxELT1G Series  
Zener Voltage Regulators  
225 mW SOT−23 Surface Mount  
This series of Zener diodes is offered in the convenient, surface  
mount plastic SOT−23 package. These devices are designed to provide  
voltage regulation with minimum space requirement. They are well  
suited for applications such as cellular phones, hand held portables,  
and high density PC boards.  
http://onsemi.com  
3
1
Cathode  
Anode  
Features  
• 225 mW Rating on FR−4 or FR−5 Board  
• Zener Voltage Range − 2.4 V to 91 V  
• Package Designed for Optimal Automated Board Assembly  
• Small Package Size for High Density Applications  
• ESD Rating of Class 3 (>16 kV) per Human Body Model  
• Peak Power − 225 W (8 x 20 ms)  
MARKING  
DIAGRAM  
3
SOT−23  
CASE 318  
STYLE 8  
Bxx M G  
G
1
• AEC−Q101 Qualified and PPAP Capable  
2
1
• SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements  
• Pb−Free Packages are Available  
Bxx = Device Code  
xx  
M
G
= (Refer to page 2)  
= Date Code*  
= Pb−Free Package  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
ORDERING INFORMATION  
MAXIMUM RATINGS  
†
Device  
MMBZ52xxELT1G  
Package  
Shipping  
Rating  
Symbol  
Max  
Unit  
SOT−23  
(Pb−Free)  
3000 / Tape &  
Reel  
Peak Power Dissipation @ 20 ms (Note 1)  
P
pk  
225  
W
@ T ≤ 25°C  
L
SZMMBZ52xxELT1G SOT−23  
(Pb−Free)  
3000 / Tape &  
Reel  
Total Power Dissipation on FR−5 Board,  
(Note 2) @ T = 25°C  
Derated above 25°C  
P
D
225  
1.8  
mW  
mW/°C  
A
MMBZ52xxELT3G  
SOT−23  
10000 / Tape &  
Reel  
(Pb−Free)  
Thermal Resistance, Junction−to−Ambient  
R
556  
°C/W  
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Total Power Dissipation on Alumina  
P
D
Substrate, (Note 3) @ T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derated above 25°C  
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature Range  
R
417  
°C/W  
°C  
q
JA  
T , T  
J
−65 to  
stg  
+150  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Nonrepetitive current pulse per Figure 9.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 2 of  
this data sheet.  
2. FR−5 = 1.0 X 0.75 X 0.62 in.  
3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
December, 2011 − Rev. 7  
MMBZ5221ELT1/D  
 
123456

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