Datasheet > MMBZ12VAT-Q

MMBZ12VAT-Q

更新时间： 2024-04-09 19:02:31

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	206K
描述
Low capacitance unidirectional double ESD protection diodeProduction

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MMBZ12VAT-Q

Low capacitance unidirectional double ESD protection diode

11. Application information

The device is designed for the protection of two lines from the damage caused by ESD and surge

pulses.

line 1 to be protected

line 2 to be protected

line 1 to be protected

GND

unidirectional protection

of two lines

bidirectional protection

of one line

aaa-033064

Fig. 6. Typical application

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge

transients. The following guidelines are recommended:

1. Place the device as close to the input terminal or connector as possible.

2. Minimize the path length between the device and the protected line.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.

12. Test information

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

MMBZ12VAT-Q

All information provided in this document is subject to legal disclaimers.

Product data sheet

2 November 2023

5 / 10

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