MMBTSC5345E-HAF PDF预览

MMBTSC5345E-HAF

更新时间: 2025-07-26 18:53:51
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
2页 62K
描述
小信号三极管

MMBTSC5345E-HAF 数据手册

 浏览型号MMBTSC5345E-HAF的Datasheet PDF文件第2页 
MMBTSC5345E-HAF  
NPN Silicon Epitaxial Planar Transistor  
for RF amplifier  
The transistor is subdivided into three groups, R,  
O and Y, according to its DC current gain.  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
30  
20  
V
4
V
Collector Current  
20  
mA  
mW  
Power Dissipation  
Ptot  
150  
O
Junction Temperature  
Storage Temperature Range  
Tj  
150  
C
O
C
Tstg  
- 55 + 150  
O
Characteristics at Tamb = 25 C  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at VCE = 6 V, IC = 1 mA  
Current Gain Group  
R
O
Y
hFE  
hFE  
hFE  
40  
70  
120  
-
-
-
80  
140  
240  
-
-
-
Collector Base Cutoff Current  
at VCB = 30 V  
ICBO  
IEBO  
-
-
-
0.5  
µA  
µA  
V
Emitter Base Cutoff Current  
at VEB = 4 V  
-
0.5  
Collector Base Breakdown Voltage  
at IC = 10 µA  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
VCE(sat)  
fT  
30  
20  
4
-
-
-
-
Collector Emitter Breakdown Voltage  
at IC = 5 mA  
-
V
Emitter Base Breakdown Voltage  
at IE = 10 µA  
Collector Emitter Saturation Voltage  
at IC = 10 mA, IB = 1 mA  
-
-
0.3  
-
V
-
V
Transition Frequency  
at VCE = 6 V, -IE = 1 mA  
-
550  
1.4  
MHz  
pF  
Collector Output Capacitance  
at VCB = 6 V, f = 1 MHz  
Cob  
-
-
®
SEMTECH  
Dated09/12/2016 Rev01  

与MMBTSC5345E-HAF相关器件

型号 品牌 获取价格 描述 数据表
MMBTSC5345W SEMTECH

获取价格

NPN Silicon Epitaxial Planar Transistor
MMBTSC5585E SWST

获取价格

小信号晶体管
MMBTSC5585E-HAF SWST

获取价格

小信号三极管
MMBTSC5585HP SWST

获取价格

小信号晶体管
MMBTSC5585HP-HAF SWST

获取价格

小信号三极管
MMBTSC6571 SWST

获取价格

小信号晶体管
MMBTSC6571-HAF SWST

获取价格

小信号三极管
MMBTSC930 SEMTECH

获取价格

NPN Silicon Epitaxial Planar Transistor
MMBTSC930 SWST

获取价格

小信号晶体管
MMBTSC945 SEMTECH

获取价格

NPN Silicon Epitaxial Planar Transistor