MMBT3904K

更新时间： 2024-02-12 11:08:41

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	58K
描述
NPN Epitaxial Silicon Transistor, General Purpose Transistor

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技术参数
数据手册

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MMBT3904K 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.58
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MMBT3904K 数据手册

February 2005

MMBT3904K

NPN Epitaxial Silicon Transistor

General Purpose Transistor

Marking

1AK

SOT-23

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CEO

V_EBO

I_C

200

350

150

°C

P_C

Collector Power Dissipation

Storage Temperature

T_STG

Electrical Characteristics T_a=25°C unless otherwise noted

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CEX

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage *

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

Max.

Units

I_C= 10µA, I_E= 0

I_C= 1mA, I_B= 0

I_E= 10µA, I_C= 0

V_CE= 30V, V_EB= 3V

V_CE= 1V, I_C= 0.1mA

_CE= 1V, I_C= 1mA

_CE= 1V, I_C= 10mA

V_CE= 1V, I_C= 50mA

_CE= 1V, I_C= 100mA

h_FE

DC Current Gain *

100

300

_CE(sat)

_BE(sat)

Collector-Emitter Saturation Voltage *

Base-Emitter Saturation Voltage *

I_C= 10mA, I_B= 1mA

_C= 50mA, I_B= 5mA

0.2

0.3

I_C= 10mA, I_B= 1mA

_C= 50mA, I_B= 5mA

0.65

300

0.85

0.95

C_ob

f_T

Output Capacitance

Current Gain-Bandwidth Product

Noise Figure

V_CB= 5V, I_E= 0, f = 1MHz

V_CE= 20V, I_C= 10mA, f = 100MHz

_C= 100µA, V_CE= 5V, R_S= 1KΩ

MHz

f = 10Hz to 15.7KHz

t_ON

Turn On Time

Turn Off Time

V_CC= 3V, V_BE= 0.5V

_C= 10mA, I_B1= 1mA

t_OFF

V_CC= 3V, I_C= 10mA, I_B1= I_B2= 1mA

250

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

MMBT3904K Rev. A

www.fairchildsemi.com

12 3 4

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