Datasheet > MMBT3904LT1

MMBT3904LT1

更新时间： 2024-10-28 22:54:43

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管光电二极管
页数	文件大小	规格书
6页	261K
描述
NPN SILICON

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数据手册

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MMBT3904LT1 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistor

NPN Silicon

MMBT3904LT1

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

Unit

Vdc

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Vdc

6.0

Vdc

200

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P_D

225

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

T_J, T_stg

–55 to +150

°C

DEVICE MARKING

MMBT3904LT1 = 1AM

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(3)

(I _C= 1.0 mAdc, I _B= 0)

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

I _BL

6.0

—

Vdc

Collector–Base Breakdown Voltage

(I _C= 10 µAdc, I _E= 0)

Emitter–Base Breakdown Voltage

(I _E= 10 µAdc, I _C= 0)

Vdc

Base Cutoff Current

nAdc

( V _CE= 30 Vdc, V _EB= 3.0 Vdc, )

Collector Cutoff Current

I _CEX

—

( V _CE= 30Vdc, I _EB= 3.0Vdc )

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width

<300 µs, Duty Cycle <2.0%.

O11–1/6

12 3 4 5 6

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