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MMBT3904G-T PDF预览

MMBT3904G-T

更新时间: 2024-01-06 20:58:31
品牌 Logo 应用领域
RECTRON 晶体晶体管开关光电二极管
页数 文件大小 规格书
6页 305K
描述
Small Signal Bipolar Transistor,

MMBT3904G-T 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.58
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MMBT3904G-T 数据手册

 浏览型号MMBT3904G-T的Datasheet PDF文件第1页浏览型号MMBT3904G-T的Datasheet PDF文件第3页浏览型号MMBT3904G-T的Datasheet PDF文件第4页浏览型号MMBT3904G-T的Datasheet PDF文件第5页浏览型号MMBT3904G-T的Datasheet PDF文件第6页 
ELECTRICAL CHARACTERISTICS (@T =25OC unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage (I = 1mAdc, I = 0)  
V
40  
-
Vdc  
C
B
(BR)CEO  
Collector-Base Breakdown Voltage (I = 10uAdc, I = 0)  
V
V
60  
6.0  
-
-
Vdc  
Vdc  
C
E
(BR)CBO  
(BR)EBO  
Emitter-Base Breakdown Voltage (I = 100uAdc, I = 0)  
-
E
C
I
Base Cutoff Current (V  
= 30Vdc, V  
= 3.0Vdc)  
50  
50  
nAdc  
nAdc  
BL  
CE  
EB  
I
Collector Cutoff Current (V  
= 30Vdc, V  
= 3.0Vdc)  
EB  
-
CEX  
CE  
ON CHARACTERISTICS(1)  
40  
DC Current Gain (I = 0.1mAdc, V  
C
= 1.0Vdc)  
= 1.0Vdc)  
-
CE  
CE  
(I = 1.0mAdc, V  
C
-
300  
-
70  
(I = 10mAdc, V  
= 1.0Vdc)  
= 1.0Vdc)  
= 1.0Vdc)  
h
100  
-
C
CE  
FE  
(I = 50mAdc, V  
C
60  
30  
CE  
(I = 100mAdc, V  
-
C
CE  
0.2  
Collector-Emitter Saturation Voltage (I = 10mAdc, I = 1.0mAdc)  
-
C
B
V
Vdc  
Vdc  
CE(sat)  
(I = 50mAdc, I = 5.0mAdc)  
-
0.3  
C
B
0.65  
0.85  
0.95  
Base-Emitter Saturation Voltage (I = 10mAdc, I = 1.0mAdc)  
C
B
V
BE(sat)  
(I = 50mAdc, I = 5.0mAdc)  
-
C
B
SMALL-SIGNAL CHARACTERISTICS  
f
300  
-
-
MHz  
pF  
Current-Gain-Bandwidth Product (I = 10mAdc, V  
C
= 20Vdc, f= 100MHz)  
T
CE  
C
4.0  
8.0  
10  
Output Capacitance (V  
Input Capacitance (V  
= 5.0Vdc, I = 0, f= 1.0MHz)  
E
obo  
CB  
C
-
pF  
= 0.5Vdc, I = 0, f= 1.0MHz)  
C
ibo  
EB  
h
1.0  
0.5  
100  
1.0  
-
kohms  
Input lmpedance (V  
= 10Vdc, I = 1.0mAdc, f= 1.0kHz)  
C
ie  
CE  
-
4
h
8.0  
400  
40  
X 10  
-
Voltage Feedback Ratio (V  
= 10Vdc, I = 1.0mAdc, f= 1.0kHz)  
C
re  
CE  
Small-Signal Current Gain (V  
= 10Vdc, I = 1.0mAdc, f= 1.0kHz)  
h
CE  
C
fe  
umhos  
dB  
Output Admittance (V  
= 10Vdc, I = 1.0mAdc, f= 1.0kHz)  
C
h
CE  
oe  
5.0  
Noise Figure (V  
= 5.0Vdc, I = 100uAdc, R = 1.0kohms, f= 1.0kHz)  
NF  
CE  
C
S
SWITCHING CHARACTERISTICS  
Delay Time  
t
-
-
-
35  
35  
d
(V  
= 3.0Vdc, V  
= -0.5Vdc, I = 10mAdc, I = 1.0mAdc)  
B1  
ns  
ns  
CC  
BE  
C
Rise Time  
t
r
Storage Time  
t
200  
s
(V  
= 3.0Vdc, I = 10mAdc, I = I = 1.0mAdc)  
B1 B2  
CC  
C
Fall Time  
t
f
-
50  
<
<
Note : Pulse Test: Pulse Width 300ms,Duty Cycle 2.0%  
-
-

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