MMBD4448HCDWP

更新时间： 2024-11-25 12:58:59

品牌	Logo	应用领域
美微科 - MCC		二极管开关
页数	文件大小	规格书
3页	95K
描述
DIODE 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE, ULTRA SMALL, PLASTIC PACKAGE-6, Signal Diode

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MMBD4448HCDWP 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	ULTRA SMALL, PLASTIC PACKAGE-6
针数：	6	Reach Compliance Code：	unknown
风险等级：	5.57	Base Number Matches：	1

MMBD4448HCDWP 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMBD4448

Features

Surface Mount

Schottky Barrier

Switching Diode

350mW

Fast Switching Speed

Surface Mount Package Ideally Suited for Automatic Insertion

For General Purpose Switching Applications

High Conductance

Mechanical Data

l Case: SOT-23, Molded Plastic

l Terminals: Solderable per MIL-STD-202, Method 208

l Polarity: See Diagram

SOT-23

l Marking: KA3

Maximum Ratings @ 25^oC Unless Otherwise Specified

Characteristic

Symbol

V_RM

Value

Unit

Non-Repetitive Peak Reverse Volt.

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

V^RRM

VRWM

V^R

RMS Reverse Voltage

VR(RMS)

I_FM

Forward Continuous Current(Note1)

Average Rectified Output Current

Non-Repetitive Peak @ t<=1.0s

Forward Surge Current @ t=1.0us

Power Dissipation(Note 1)

500

DIMENSIONS

250

INCHES

MIN

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

NOTE

I^FSM

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

350

K/W

^oC

Thermal Resistance(Note 1)

Operation/Storage Temp. Range

357

.100

1.12

.180

.51

Tj, T^STG

-55 to +150

.085

.37

Electrical Characteristics @ 25^oC Unless Otherwise Specified

Suggested Solder

Pad Layout

.031

.800

Charateristic

Symbol Min

Max

Unit

Test Cond.

I_F=5.0mA

IF=10mA

0.62 0.72

Maximum Forward

Voltage Drop

V^FM

----- 0.855

IF=100mA

IF=150mA

VR=75V

.035

.900

1.25

2.5

.079

2.000

inches

Maximum Peak

Reverse Current

IRM

-----

uA VR=75V Tj=150^oC

uA VR=25V Tj=150^oC

VR=20V

.037

.950

Junction Capacitance

-----

pF VR=0V, f=1.0MHz

.037

.950

Reverse Recovery Time

trr

Note: 1. Valid provided that terminals are kept at ambient temperature

2. Trr Test Condition: IF=IR=10mA, Irr=0.1*IR, R=100 OHM

www.mccsemi.com

12 3

中文翻译

下载PDF

与MMBD4448HCDWP相关器件

型号	品牌	获取价格	描述	数据表
MMBD4448HCDWPT	CHENMKO	获取价格	SWITCHING DIODE ARRAY
MMBD4448HCDW-T	MCC	获取价格	Diode,
MMBD4448HCDW-T1-LF	WTE	获取价格	Rectifier Diode, 4 Element, 0.25A, 80V V(RRM), Silicon,
MMBD4448HCDW-TP	MCC	获取价格	Rectifier Diode, 4 Element, 0.25A, 80V V(RRM), Silicon, ROHS COMPLIANT, ULTRA SMALL, PLAST
MMBD4448HCQW	DIODES	获取价格	SURFACE MOUNT FAST SWITCHING DIODE ARRAY
MMBD4448HCQW	MCC	获取价格	200mW Switching Diodes
MMBD4448HCQW	WON-TOP	获取价格	SMD
MMBD4448HCQW	BL Galaxy Electrical	获取价格	0.25A,80V,Surface Mount Small Signal Switching Diodes
MMBD4448HCQW_0712	DIODES	获取价格	SURFACE MOUNT FAST SWITCHING DIODE ARRAY
MMBD4448HCQW_1	DIODES	获取价格	SURFACE MOUNT FAST SWITCHING DIODE ARRAY

与MMBD4448HCDWP相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

40
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

32
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

60
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

56

产品中心

服务支持

精选活动

关于我们

帮助中心

MMBD4448HCDWP

MMBD4448HCDWP 技术参数

MMBD4448HCDWP 数据手册

与MMBD4448HCDWP相关器件

与MMBD4448HCDWP相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMBD4448HCDWP

MMBD4448HCDWP 技术参数

MMBD4448HCDWP 数据手册

与MMBD4448HCDWP相关器件

与MMBD4448HCDWP相关文章

您还可以找

您在本页遇到什么问题？