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MMAD1106E3 PDF预览

MMAD1106E3

更新时间： 2024-01-12 06:50:16
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网测试光电二极管
页数 文件大小 规格书
2页 72K
描述
Trans Voltage Suppressor Diode, 75V V(RWM), Unidirectional, 8 Element, Silicon, ROHS COMPLIANT, PLASTIC, SOIC-14

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中文翻译

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MMAD1106E3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：ROHS COMPLIANT, PLASTIC, SOIC-14
针数：14Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.65其他特性：LOW CAPACITANCE
最小击穿电压：90 V配置：COMMON ANODE, 8 ELEMENTS
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
最大正向电压 (VF)：1 VJESD-30 代码：R-PDSO-G14
JESD-609代码：e3元件数量：8
端子数量：14最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性：UNIDIRECTIONAL
最大功率耗散：1.5 W认证状态：Not Qualified
最大重复峰值反向电压：75 V最大反向电流：300 µA
最大反向恢复时间：0.005 µs反向测试电压：20 V
子类别：Other Diodes表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

MMAD1106E3 数据手册

 浏览型号MMAD1106E3的Datasheet PDF文件第2页 
MMAD1106 and MMAD1106e3  
Switching Diode Array  
Steering Diode TVS Array™  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These low capacitance diode arrays are multiple, discrete, isolated junctions  
fabricated by a planar process and mounted in a 14-pin package for use as  
steering diodes protecting up to eight I/O ports from negative ESD, EFT, or  
surge by directing them to ground (pin 14)*. They may also be used in fast  
switching core-driver applications. This includes computers and peripheral  
equipment such as magnetic cores, thin-film memories, plated-wire  
memories, etc., as well as decoding or encoding applications. These arrays  
offer many advantages of integrated circuits such as high-density packaging  
and improved reliability. This is a result of fewer pick and place operations,  
smaller footprint, smaller weight, and elimination of various discrete  
packages that may not be as user friendly in PC board mounting. They are  
available with either Tin-Lead plating terminations or as RoHS Compliant  
with annealed matte-Tin finish by adding an “e3” suffix to the part number.  
*See MMAD1105(e3) for directing positive transients to positive side of the  
power supply line.  
Top Viewing Pin Layout  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
•
8 Diode Array  
Molded 14-Pin SOIC Package  
UL 94V-0 Flammability Classification  
Low Capacitance 1.5 pF per diode  
Switching speeds less than 5 ns  
•
Low capacitance steering diode protection for high  
frequency data lines  
RS-232 & RS-422 Interface Networks  
Ethernet: 10 Base T  
Computer I / O Ports  
LAN  
•
•
•
•
RoHS Compliant devices available by adding “e3” suffix  
IEC 61000-4 compatible  
•
Switching Core Drivers  
61000-4-2 (ESD): Air 15kV, contact – 8 kV  
61000-4-4 (EFT): 40A – 5/50 ns  
61000-4-5 (surge): 12A, 8/20 µs  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Forward Surge Current: 2 Amps (8.3 ms)  
12 Amps (8/20 µs)  
Continuous Forward Current: 400 mA (one diode)  
Power Dissipation (PD): 1500 mW (total)  
Solder Temperatures: 260°C for 10 s (maximum)  
•
•
•
CASE: Void-free transfer molded thermosetting  
epoxy body meeting UL94V-0 flammability  
classification  
TERMINALS: Tin-Lead or RoHS Compliant  
annealed matte-Tin plating solderable per MIL-  
STD-750 method 2026  
MARKING: MSC logo, MMAD1106 or  
MMAD1106e3 and date code. Pin #1 is to the left  
of the dot or indent on top of package  
WEIGHT: 0.127 grams (approximate)  
Tape & Reel packaging: 2500 pcs (STANDARD)  
•
•
•
•
•
•
Carrier tube packaging: 55 pcs  
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified  
BREAKDOWN  
VOLTAGE  
VBR  
WORKING  
PEAK  
REVERSE  
VOLTAGE  
VRWM  
LEAKAGE  
CURRENT  
IR  
LEAKAGE  
CURRENT  
IR  
CAPACITANCE  
REVERSE  
RECOVERY  
TIME  
FORWARD  
VOLTAGE  
VF  
FORWARD  
VOLTAGE  
VF  
C
@ 0 V  
@ IBR =100µA  
TA = 25°C  
TA = 150°C  
trr  
IF = 10 mA  
IF = 100 mA  
PART  
NUMBER  
V
V
µA  
µA  
pF  
ns  
V
V
MIN  
MAX  
75  
MAX  
0.200  
@VR  
20  
MAX  
300  
@VR  
20  
TYP  
MAX  
MAX  
MAX  
MMAD1106  
MMAD1106e3  
90  
1.5  
5.0  
1.00  
1.20  
Copyright © 2005  
6-28-2005 REV K  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

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